Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

Autor: Lis K. Nanver, Max Krakers, Tihomir Knežević

Publikováno v: Krakers, M, Knežević, T & Nanver, L K 2021, ' Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting ', Journal of Electronic Materials, vol. 50, no. 12, pp. 7026-7036 . https://doi.org/10.1007/s11664-021-09233-8
Journal of electronic materials, 50(12), 7026-7036. Springer

An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabric

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http://www.scopus.com/inward/record.url?scp=85116406780&partnerID=8YFLogxK

On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology

Autor: Xingyu Liu, Max Krakers, Tihomir Knezevic, Shivakumar D. Thammaiah, Lis K. Nanver

Publikováno v: Journal of nanoscience and nanotechnology, 21(4), 2472-2482. American Scientific Publishers

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow p+n-like

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b19bf441bb71369719f8dadb75bfd03
https://www.bib.irb.hr/1089666