Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Max Kneiß"'
Publikováno v:
APL Materials, Vol 11, Iss 6, Pp 061122-061122-8 (2023)
Phase-pure α-Ga2O3 thin films with high surface quality and crystallinity have been grown on m-plane sapphire using pulsed laser deposition (PLD). Therefore, the influence of growth temperature, oxygen background pressure, and film thickness on the
Externí odkaz:
https://doaj.org/article/df4a0ae3b577465bb2025924a78d963a
Autor:
Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 7, Pp 071115-071115-7 (2019)
The incorporation of In2O3 into Ga2O3 allows for tailoring of the bandgap over a wide range in (InxGa1−x)2O3, and this material is emerging as a candidate in transparent electrodes on optoelectronic devices, heterostructure transistors, photodetect
Externí odkaz:
https://doaj.org/article/8381e358fe694eef8bdab69d037a8d2c
Autor:
Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann
Structural and electrical properties of undoped and doped amp; 945; amp; 8722;Ga2O3 thin films grown by pulsed laser deposition on m plane sapphire in a two step process are presented. A buffer layer of undoped amp; 945; amp; 8722;Ga2O3 is introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90d43e37ca63193c827c241595e6fe5d
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108419
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=108419
Autor:
Norbert Koch, Holger von Wenckstern, Daniel Splith, Max Kneiß, Thorsten Schultz, Marius Grundmann, Michael Lorenz
Publikováno v:
Journal of Materials Research. 36:4816-4831
Abstract Pseudomorphic and relaxed $$\alpha$$ α -(Al$$_x$$ x Ga$$_{1-x}$$ 1 - x )$$_2$$ 2 O$$_3$$ 3 thin films are grown by combinatorial pulsed laser deposition in the entire composition range on prismatic a- and m-plane $$\alpha$$ α -Al$$_2$$ 2 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a8c797be781de76d53d69d33c29393
https://doi.org/10.1557/s43578-021-00375-3
https://doi.org/10.1557/s43578-021-00375-3
Autor:
Max Kneiß, Philipp Storm, Norbert Koch, Thorsten Schultz, Marius Grundmann, Daniel Splith, Holger von Wenckstern
Publikováno v:
ACS Applied Materials & Interfaces. 12:8879-8885
Conduction and valence band offsets are among the most crucial material parameters for semiconductor heterostructure device design, such as for high-electron mobility transistors or quantum well infrared photodetectors (QWIP). Because of its expected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fa8fe615f19e7d1666b32136e9b5172
https://doi.org/10.1021/acsami.9b21128
https://doi.org/10.1021/acsami.9b21128
Autor:
Max Kneiss, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Thorsten Schultz, Norbert Koch, Marius Grundmann
Publikováno v:
Oxide-based Materials and Devices XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8fca9051d8abc7e564161b54c4dc6dc
https://doi.org/10.1117/12.2623452
https://doi.org/10.1117/12.2623452
Autor:
Marius Grundmann, Max Kneiss, Anna Reinhardt, Chris Sturm, Holger von Wenckstern, Laurenz Thyen, Daniel Splith, Lukas Trefflich
Publikováno v:
Oxide-based Materials and Devices XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e434690dff55da1dcabd586f696479e
https://doi.org/10.1117/12.2619159
https://doi.org/10.1117/12.2619159
Autor:
Max Kneiss, Daniel Splith, Peter Schlupp, Anna Hassa, Holger von Wenckstern, Michael Lorenz, Marius Grundmann
Publikováno v:
Oxide-based Materials and Devices XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d2b558f57c28fed7290eec9f351e19
https://doi.org/10.1117/12.2623450
https://doi.org/10.1117/12.2623450
Publikováno v:
Journal of Vacuum Science & Technology A. 41:020801
We introduce a novel technique, masked-assisted radial-segmented target pulsed-laser deposition (MARS-PLD) for unprecedented capabilities in area-selective physical vapor deposition. The MARS-PLD setup consists of a conventional PLD chamber with mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab5936715b71bec3ed69c7bc076a9ec
https://doi.org/10.1116/6.0002275
https://doi.org/10.1116/6.0002275
Autor:
Stephen J. Pearton, Chaker Fares, Brent P. Gila, Holger von Wenckstern, Marius Grundmann, Marko J. Tadjer, Fan Ren, Max Kneiss, David C. Hays
Publikováno v:
ECS Transactions. 92:79-88
β-Ga2O3 is a wide bandgap semiconductor (~4.8 eV) with properties suited to power electronics, truly solar-blind UV detection, and extreme environment applications. Additional bandgap tunability can be achieved through incorporation of Al into β-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd3bbf7caab08bf2dd396a009d60e31
https://doi.org/10.1149/09207.0079ecst
https://doi.org/10.1149/09207.0079ecst