Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Max Klingsporn"'
Autor:
Gudrun Kissinger, Andreas Sattler, Andreas Huber, Dawid Kot, Max Klingsporn, Markus Andreas Schubert
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 9:405-409
In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff–Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of
Autor:
Iver Lauermann, Thomas Walter, Frank Hergert, Max Klingsporn, Rutger Schlatmann, S. Merdes, Sebastian S. Schmidt, Florian Ziem, Tetiana Lavrenko
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:1493-1500
We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH.
Autor:
Onno Gabriel, Bernd Stannowski, F. Friedrich, Rutger Schlatmann, Simon Kirner, Max Klingsporn
Publikováno v:
Plasma Processes and Polymers. 12:82-91
The advanced opto-electronic properties of microcrystalline silicon oxide (µc-SiOx:H) thin film layers deposited by means of plasma enhanced chemical vapor deposition (PECVD) resulted in several applications of this material especially in solar cell
Autor:
Achim Trampert, Frank Grosse, Oliver Bierwagen, Michael Niehle, Max Klingsporn, André Proessdorf
The fundamental issue of oxygen stoichiometry in oxide thin film growth by subliming the source oxide is investigated by varying the additionally supplied oxygen during molecular beam epitaxy of RE2O3 (RE = Gd, La, Lu) thin films on Si(111). Supplyin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce58e646de099d42bf716d114f005046
Autor:
Daniel Abou-Ras, I. Costina, Bernd Stannowski, Simon Kirner, Max Klingsporn, Michael Lehmann, C. Villringer
Publikováno v:
Journal of Applied Physics. 119:223104
Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical prop
Publikováno v:
Surface science
The adsorption of coronene (C24H12) on the Si(111)-(7 7) surface is studied using Scanning Tunneling Microscopy (STM). Upon room temperature submonolayer deposition, we nd that the coronene molecules preferentially adsorb on the unfaulted half of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b738485b1f1dac9d88c94acecd6a9c
https://hdl.handle.net/11858/00-001M-0000-0010-F607-821.11116/0000-0009-9280-011858/00-001M-0000-0010-F606-A21.11116/0000-0009-9281-F
https://hdl.handle.net/11858/00-001M-0000-0010-F607-821.11116/0000-0009-9280-011858/00-001M-0000-0010-F606-A21.11116/0000-0009-9281-F
Publikováno v:
ECS Meeting Abstracts. :720-720
Atomic layer deposition of antimony oxide thin films was investigated in a temperature range between 50 and 250 °C using triethylantimony and ozone. Layer thickness was measured by spectroscopic ellipsometry using adapted layer models. It was proved