Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Max J. Schulz"'
Autor:
Max J. Schulz, U. Hörmann, Horst P. Strunk, Carsten Schür, Martin Albrecht, T. Remmele, H. Grünleitner
Publikováno v:
Solid State Phenomena. :101-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c51781b3ac8778ce30f263586654c2
https://doi.org/10.4028/www.scientific.net/ssp.80-81.101
https://doi.org/10.4028/www.scientific.net/ssp.80-81.101
Publikováno v:
physica status solidi (a). 185:429-439
Ultrathin (0.6-3.7 nm) IrSi films are fabricated by electron beam evaporation of iridium metal onto n-type silicon (100) substrates and subsequent silicide formation at 500°C. The sheet resistivity is measured at various temperatures in the range fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf91c516a0debb841217afe6483b2d22
https://doi.org/10.1002/1521-396x(200106)185:2<429::aid-pssa429>3.0.co
https://doi.org/10.1002/1521-396x(200106)185:2<429::aid-pssa429>3.0.co
Publikováno v:
High Temperatures-High Pressures. 33:183-188
Several staring infrared focal plane arrays differing in size and in detector material are investigated. The temporal noise and the correctability, c, defined as the ratio of the spatial inhomogeneity to the temporal noise, are determined in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54bed74f2e79253ab03d7305a31b5540
https://doi.org/10.1068/htwu162
https://doi.org/10.1068/htwu162
Publikováno v:
physica status solidi (b). 222:379-387
The effective lifetime of charge carriers τ eff in multicrystalline silicon (mc-Si) Baysix® wafers (in our case: Bridgman-type) cut from areas close above the ingot bottom is reduced (τ eff < 1 μs). However, the efficiency of solar cells processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3af651d09dc97bdfcb9f6cd12e3bfc8
https://doi.org/10.1002/1521-3951(200011)222:1<379::aid-pssb379>3.0.co
https://doi.org/10.1002/1521-3951(200011)222:1<379::aid-pssb379>3.0.co
Publikováno v:
Materials Science Forum. :1065-1068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e774c348f6daecea5138025bfd352db
https://doi.org/10.4028/www.scientific.net/msf.338-342.1065
https://doi.org/10.4028/www.scientific.net/msf.338-342.1065
Publikováno v:
Applied Physics A: Materials Science & Processing. 68:451-455
The initial stages of thin Ir film=Si(100) reac- tion are studied by means of grazing incidence X-ray re- flection and transmission electron microscopy. We observe amorphous layers between the Ir film and the Si(100) sub- strate already to be present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::745528755718660c7f90334c87c168a7
https://doi.org/10.1007/s003390050922
https://doi.org/10.1007/s003390050922
Autor:
Max J. Schulz, H.-U. Höfs, Axel Voigt, D. Karg, Horst P. Strunk, C. Häßler, Gerhard Pensl, J. Krinke
Publikováno v:
Solid State Phenomena. :33-38
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c0905c64b9d84c5ba92d023a54468c
https://doi.org/10.4028/www.scientific.net/ssp.67-68.33
https://doi.org/10.4028/www.scientific.net/ssp.67-68.33
Publikováno v:
physica status solidi (b). 210:533-537
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d6cb4cb70e08d107ce4810d224e121
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<533::aid-pssb533>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<533::aid-pssb533>3.0.co
Publikováno v:
Surface Science. 411:L810-L815
We derive the quantum mechanical transmission coefficient for the electron transport across a plane interface of a metal/semiconductor or semiconductor/semiconductor heterostructure. An effective mass model is used for the conduction band in each lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::164a6e5625a4f6bd30a6de2ca5c9af41
https://doi.org/10.1016/s0039-6028(98)00395-1
https://doi.org/10.1016/s0039-6028(98)00395-1
Autor:
Horst P. Strunk, E. Burkel, V. Demuth, H. Grünleitner, D. Wörle, Christian Kumpf, Max J. Schulz
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:629-637
The electro-optical properties of the films are studied by measuring the infrared optical absorption and the yield of hole photoemission across the Schottky barrier to the p-Si substrate. The Schottky barrier height of the amorphous a-IrSi to the val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb74943fab656f48fa82b2a48dece1f
https://doi.org/10.1007/s003390050724
https://doi.org/10.1007/s003390050724