Zobrazeno 1 - 10
of 472
pro vyhledávání: '"Max G. Lagally"'
Autor:
Shiva Hajitabarmarznaki, Shelley A. Scott, Marcos Martinez-Argudo, Divya J. Prakash, Max G. Lagally, Daniel W. van der Weide, Francesca Cavallo
Publikováno v:
ACS Omega, Vol 9, Iss 33, Pp 35973-35977 (2024)
Externí odkaz:
https://doaj.org/article/425eec62f8f04408b74e2ba0b9aa0d58
Autor:
Marcos Martínez Argudo, Shiva Hajitabarmarznaki, Divya J. Prakash, Matthew M. Dwyer, Max G. Lagally, Daniel W. van der Weide, Francesca Cavallo
Publikováno v:
AIP Advances, Vol 12, Iss 8, Pp 085121-085121-8 (2022)
We investigate the interaction between an electron beam and a THz guided electromagnetic wave in a helical slow-wave structure formed by self-assembly of a conductive ribbon. We have previously shown the controlled fabrication of this slow-wave struc
Externí odkaz:
https://doaj.org/article/3426895fca7c4e2c841a440e555c9974
Autor:
Xiao Xue, Benjamin D’Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen
Publikováno v:
Physical Review X, Vol 10, Iss 2, p 021006 (2020)
Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step toward the implementation of quantum error-correcting codes, quantum nondemolition measurements are needed to efficiently detect the state of
Externí odkaz:
https://doaj.org/article/c88ad33df83a47e9a5ea593e177e113a
Autor:
Roberto Paiella, Max G. Lagally
Publikováno v:
Nanomaterials, Vol 8, Iss 6, p 407 (2018)
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale int
Externí odkaz:
https://doaj.org/article/4e358273cd314e3f95b4c7be27e3f3d9
Autor:
Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, Max G. Lagally, Mark A. Eriksson, Victor W. Brar
Publikováno v:
ACS Applied Materials & Interfaces. 15:12545-12550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4cbb6501656bd3a60b60a903b853f34
https://doi.org/10.1021/acsami.2c21306
https://doi.org/10.1021/acsami.2c21306
Autor:
Robert M. Jacobberger, Donald E. Savage, Xiaoqi Zheng, Pornsatit Sookchoo, Richard Rojas Delgado, Max G. Lagally, Michael S. Arnold
Publikováno v:
Chemistry of Materials. 34:6769-6778
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8366bb1d4229b776cfebfa5de6132083
https://doi.org/10.1021/acs.chemmater.2c00919
https://doi.org/10.1021/acs.chemmater.2c00919
Autor:
Divya J. Prakash, Jay Vijayamohanan, Grant D. Heilman, Anjali Chaudhary, Max G. Lagally, Daniel W. Van Der Weide, Christos Christodoulou, Francesca Cavallo
Publikováno v:
2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b7e9102cc2cefe80cac8035deb0885
https://doi.org/10.1109/ucmmt56896.2022.9994830
https://doi.org/10.1109/ucmmt56896.2022.9994830
Autor:
Anjali Chaudhary, Divya J. Prakash, Shelley A. Scott, Daniel van der Weide, Max G. Lagally, Francesca Cavallo
Publikováno v:
2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da1e4936d5504384b510f8f6d7012064
https://doi.org/10.1109/ucmmt56896.2022.9994819
https://doi.org/10.1109/ucmmt56896.2022.9994819
Autor:
Richard M. Osgood, Hanfei Yan, Yong S. Chu, Roberto Paiella, Zi-Cong Huang, Xiaowei Wang, Evgeny Nazaretski, Ajith Pattammattel, Max G. Lagally, Abhishek Bhat, Abdullah Gok, Shelley A. Scott
Publikováno v:
ACS Applied Nano Materials. 4:6160-6169
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f977eecab1aab1be6bd77010e8e29f24
https://doi.org/10.1021/acsanm.1c00966
https://doi.org/10.1021/acsanm.1c00966
Autor:
Yingxin Guan, Thomas F. Kuech, Max G. Lagally, Shelley A. Scott, Omar Elleuch, Xiaorui Cui, Abhishek Bhat
Publikováno v:
ACS Applied Materials & Interfaces. 12:20859-20866
The growth of single crystals of Ge-rich SiGe alloys in an extended composition range is demonstrated using the nanomembrane (NM) platform and III-V growth substrates. Thin films of high-Ge-content SiGe films are grown on GaAs(001) to below the kinet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ffbd08b062982f04c2db9fa160e556a
https://doi.org/10.1021/acsami.0c02747
https://doi.org/10.1021/acsami.0c02747