Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Max A. Levy"'
Autor:
Andrea Estandía, Joan Ferrer Obiol, Vincent Bretagnolle, Helen F. James, Jacob González-Solís, Andreanna J. Welch, R. Terry Chesser, Max A. Levy
Publikováno v:
BioRxiv
BioRxiv, 2022, ⟨10.1101/2021.07.27.453752⟩
BioRxiv, 2022, ⟨10.1101/2021.07.27.453752⟩
International audience; Substitution rate variation among branches can lead to inaccurate reconstructions of evolutionary relationships and obscure the true phylogeny of affected clades. Body mass is often assumed to have a major influence on substit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86c639bb676ef99f5e6e6a25a1be323c
https://doi.org/10.1101/2021.07.27.453752
https://doi.org/10.1101/2021.07.27.453752
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f T characteristics. The STI depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a254f37e54661a5fc5a2f6272adadfeb
https://doi.org/10.1109/ispsd.2011.5890829
https://doi.org/10.1109/ispsd.2011.5890829
Autor:
Hubert Enichlmair, Jong Mun Park, Bernhard Loeffler, Rainer Minixhofer, Max G. Levy, Sara Carniello
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
The hot carrier stress induced device degradation of a p-type LDMOS high voltage transistor is investigated at different stress conditions. The influence of shallow trench corner rounding and carbon ion implantation into the shallow trench region is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c383b0868dc6b467638a821d08b03140
https://doi.org/10.1109/irps.2009.5173291
https://doi.org/10.1109/irps.2009.5173291
Publikováno v:
SPIE Proceedings.
Photomask substrate, blank, and finished mask flatness are becoming more serious concerns for photomask fabrication. Most commercial and captive mask houses now use a combination of mask blanks at various flatness levels from >2.0um to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba944b9d317d2a635df6119c240da462
https://doi.org/10.1117/12.599598
https://doi.org/10.1117/12.599598
Autor:
Robin Ackel, Emily Fisch, Mark Lawliss, Chester Huang, Carey W. Thiel, Louis Kindt, Kenneth C. Racette, Max G. Levy
Publikováno v:
SPIE Proceedings.
Fabrication of EUVL masks requires formation of both a repair buffer layer and an EUV absorber layer on top of a molybdenum/silicon (Mo/Si) multilayer coated mask blank. Alteration of the Mo/Si multilayer during etch, repair or cleaning of the EUVL m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf56ff8a6727f6d7eda77da191c2bd7
https://doi.org/10.1117/12.484988
https://doi.org/10.1117/12.484988