Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Mavredakis, Nikolaos"'
Autor:
Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Txoperena, Oihana, Torres, Elias, Jiménez, David
Publikováno v:
IEEE Trans. Electron Devices, vol. 71, no. 1, pp. 853-859, Jan. 2024
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induced by geometrical scaling effects for graphene transistor (GFET) techno
Externí odkaz:
http://arxiv.org/abs/2401.14674
Autor:
Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Alam, Md Hasibul, Guimerà-Brunet, Anton, Martinez, Javier, Garrido, Jose Antonio, Akinwande, Deji, Jiménez, David
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect ca
Externí odkaz:
http://arxiv.org/abs/2303.17162
Autor:
Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, Jiménez, David
Publikováno v:
Microelectronics J, vol. 133, 105715, 2023
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is precisely valid
Externí odkaz:
http://arxiv.org/abs/2302.04616
Autor:
Pasadas, Francisco, Feijoo, Pedro C., Mavredakis, Nikolaos, Pacheco-Sanchez, Aníbal, Chaves, Ferney A., Jiménez, David
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary
Externí odkaz:
http://arxiv.org/abs/2209.00388
Publikováno v:
IEEE Transactions on Electron Devices, 2022
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degr
Externí odkaz:
http://arxiv.org/abs/2206.00644
Autor:
Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Sakalas, Paulius, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, Jimenez, David
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the s
Externí odkaz:
http://arxiv.org/abs/2104.11518
Autor:
Mavredakis, Nikolaos, Jimenez, David
Publikováno v:
IEEE TED 68 (9) 2021 4762-4765
The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was contradicted by recent experimental and theoretical studies. In this
Externí odkaz:
http://arxiv.org/abs/2104.11512
Publikováno v:
in IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4201-4208, Nov. 2016
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise (RTN). Carrier
Externí odkaz:
http://arxiv.org/abs/2009.00917
Autor:
Pacheco-Sanchez, Anibal, Mavredakis, Nikolaos, Feijoo, Pedro C., Wei, Wei, Pallecchi, Emiliano, Happy, Henri, Jiménez, David
Publikováno v:
IEEE Transactions on Electron Devices 2020
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable app
Externí odkaz:
http://arxiv.org/abs/2006.15889
Autor:
Mavredakis, Nikolaos, Cortadella, Ramon Garcia, Illa, Xavi, Schaefer, Nathan, Calia, Andrea Bonaccini, Guimera-Brunet, Anton, Garrido, Jose Antonio, Jimenez, David
Publikováno v:
Nanoscale Adv., 2020,2, 5450-5460
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of operating co
Externí odkaz:
http://arxiv.org/abs/2006.02743