Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Mauro Ciappa"'
Autor:
Marco Pocaterra, Mauro Ciappa
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100203- (2023)
Single event burnouts (SEB) threaten the safe operation of high voltage SiC power devices in a wide range of applications. The triggering of this failure mechanism has been widely documented for the case of heavy ions and neutron interactions. In thi
Externí odkaz:
https://doaj.org/article/9d4aef02b65f4d52b6d3a9d5ce10da23
Autor:
Mauro Ciappa, Marco Pocaterra
Publikováno v:
IRPS
The susceptibility to terrestrial cosmic rays (TCR) of power devices is strongly correlated to the peak of the local electric field, thus to the resulting local carriers' multiplication. In this paper, the soft gamma radiation from an Am241 source is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3bd53c7ba74e9c0fd5cb9a03b14c3ca
https://doi.org/10.1109/irps46558.2021.9405205
https://doi.org/10.1109/irps46558.2021.9405205
Autor:
Mauro Ciappa, Marco Pocaterra
Publikováno v:
IRPS
A non-invasive characterization technique for SiC power devices is proposed, which makes use of radioactive gamma sources for the choice of the optimum bias derating conditions to minimize field failures due to terrestrial cosmic radiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5af3691774afbe16d162b5ab7d12a3
https://doi.org/10.1109/irps45951.2020.9128885
https://doi.org/10.1109/irps45951.2020.9128885
Autor:
Mauro Ciappa, Marco Pocaterra
Publikováno v:
Microelectronics Reliability, 114
A dedicated experimental setup is presented for the acquisition of single ionization events generated in power devices by ionizing radiation. This spectrometer chain is designed to be used for long-term experiments, where devices are submitted to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40dff7b890e5694ae9a17eeb49010b22
Autor:
Ying Pang, Mauro Ciappa
Publikováno v:
Microelectronics Reliability. :992-997
This paper reports about the results of a long-term experiment intended to measure the energy and the charge deposited by environmental ionizing radiation in thick silicon depletion layers, which are representative of the situation encountered in som
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1092dbc83f837e027002406240d0e925
https://doi.org/10.1016/j.microrel.2018.07.146
https://doi.org/10.1016/j.microrel.2018.07.146
Publikováno v:
Microelectronics Reliability. :476-481
The occurrence of critical spots, where carriers' multiplication occurs due to the local high-electric field can be very detrimental for the robustness and the reliability of power devices, since catastrophic failure mechanisms like Single Event Burn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0356bcaa926cc48e50a0960f8c43a8e3
https://doi.org/10.1016/j.microrel.2018.07.129
https://doi.org/10.1016/j.microrel.2018.07.129
Autor:
Mauro Ciappa, Franc Dugal
Publikováno v:
Microelectronics Reliability. :460-464
Solid Diffusion Bonding of the Copper-Zinc system is preliminarily investigated as a possible bonding solution for power modules. The idea behind the study is to use standard processing equipment, as it is employed for instance for Silver sintering.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0990ef1dc3392b8d0eb106e960c5ac9
https://doi.org/10.1016/j.microrel.2017.07.023
https://doi.org/10.1016/j.microrel.2017.07.023
Autor:
Mauro Ciappa, Takuo Kikuchi
Publikováno v:
Microelectronics Reliability. 58:33-38
Threshold voltage instability is a main reliability issue of silicon carbide MOS transistors submitted to gate bias stress. A new time and temperature-dependent TCAD model based on multiphonon-assisted tunneling is proposed. The dynamics during both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5bb0fea44cb7b4bfcd278dd25c7fee3
https://doi.org/10.1016/j.microrel.2016.01.011
https://doi.org/10.1016/j.microrel.2016.01.011
Autor:
Marco Pocaterra, Mauro Ciappa
Publikováno v:
Microelectronics Reliability, 114
In this paper, some issues are solved that are encountered if using the high-energy gamma radiation for the non- invasive characterization of carrier multiplication in commercial, packaged SiC power devices under pre- breakdown conditions. For this s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf3f8ea12d78163db0410f281468659
https://doi.org/10.1016/j.microrel.2020.113838
https://doi.org/10.1016/j.microrel.2020.113838
Publikováno v:
Ciappa, M, Cova, P, Meneghesso, G & Iannuzzo, F 2018, ' Editorial ', Microelectronics Reliability, vol. 88-90, pp. 1-1 . https://doi.org/10.1016/j.microrel.2018.09.003
This Special Issue of Microelectronics Reliability includes the peer-reviewed manuscripts of all contributions presented at the 29thEuropean Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018) held in Aalborg (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2858899182bf4e887db9972584aaa2e1
https://vbn.aau.dk/da/publications/5defc610-b682-466a-a7d8-94a8dc742c18
https://vbn.aau.dk/da/publications/5defc610-b682-466a-a7d8-94a8dc742c18