Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Maurizio Moschetti"'
Autor:
Giovanni Giorgino, Marcello Cioni, Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo, Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, Aurore Constant, Cristina Tringali, Ferdinando Iucolano, Alessandro Chini
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 6, Iss , Pp 100338- (2023)
AlGaN/GaN devices for both power and RF applications have been investigated in this work. In particular, regarding power applications, 100 V p-GaN gate transistors have been analysed both in DC and in dynamic conditions with specific attention to the
Externí odkaz:
https://doaj.org/article/d4cd7a31ce314b39a47c1070eb851cea
Autor:
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano
Publikováno v:
Crystals, Vol 13, Iss 9, p 1309 (2023)
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer
Externí odkaz:
https://doaj.org/article/9d2901c427f84c1eaf7840dfab16a07e
Autor:
Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone
Publikováno v:
Sensors, Vol 18, Iss 7, p 2289 (2018)
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experi
Externí odkaz:
https://doaj.org/article/45f40ba13ec9464193b3c28ec80af950
Autor:
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte
In this work, threshold voltage instability of normally off p-GaN high electron mobility transistors has been investigated by monitoring the gate current density during a device on-state. The origin of gate current variations under stress has been as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b98a27634370cb2d37721c4b0e80675
http://arxiv.org/abs/2212.06442
http://arxiv.org/abs/2212.06442
Autor:
Nicolò Zagni, Marcello Cioni, Maria Eloisa Castagna, Maurizio Moschetti, Ferdinando Iucolano, Giovanni Verzellesi, Alessandro Chini
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Autor:
Nicolò Zagni, Marcello Cioni, Ferdinando Iucolano, Maurizio Moschetti, Giovanni Verzellesi, Alessandro Chini
In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on the dynamic R ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R ON transients acquired during OFF-state stress (i.e. V GS,S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8808f12fb7cb19056b9874d6df73f401
https://hdl.handle.net/11380/1256717
https://hdl.handle.net/11380/1256717
Autor:
Ferdinando Iucolano, Maurizio Moschetti, Marcello Cioni, Giovanni Verzellesi, Alessandro Chini, Nicolo Zagni
Dynamic ${R}_{\mathrm{\scriptscriptstyle {ON}}}$ dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb9f1805289012edc89b5626b2459aba
https://hdl.handle.net/11380/1252117
https://hdl.handle.net/11380/1252117
Publikováno v:
2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE).
ST, following its historical leadership position in Smart Power Technologies, is introducing the new STi2GaN Product Family for both 100V and 650V Voltage clusters: System in package with Si controller and Monolithic approach integrating the power st
Autor:
Alberto Messina, Salvatore Cascino, Roberto Modica, Maria Eloisa Castagna, Antonello Santangelo, Maurizio Moschetti, Viviana Cerantonio
Publikováno v:
Sensors and Actuators A: Physical. 279:617-623
In this paper, we report on the simulation, design, fabrication and characterization of a tungsten (W) hot plate with a high electro-thermal stability and thermal uniform distribution. The device is constituted by a tungsten multi-rings resistor embe
Autor:
Giovanni Casini, Dario Giove, G. Lanzalone, C. Ciampi, C. Agodi, Giacomo Borghi, G. C. Bussolino, Francesco La Via, Giuseppe Longo, Alberto Fazzi, Salvatore Tudisco, Massimo Zimbone, Salvatore Cascino, Massimo Camarda, Marco Mauceri, C. Altana, Sabina Ronchin, Marica Rebai, Giada Petringa, Valeria Puglisi, G.A.P. Cirrone, Maurizio Moschetti, A. Trifirò, Giacomo Poggi, Grazia Litrico, Stefania Privitera, Manuela Cavallaro, Gabriele Pasquali, Giacomo Cuttone, Sebastiana Puglia, Antonello Santangelo, Maurizio Boscardin, Roberto Modica, Luca Labate, Lucia Calcagno, Andrea Stefanini, Diana Carbone, Annamaria Muoio, Nicolò Piluso, Francesco Cappuzzello, Domenico Lo Presti, G. Gorini, F. Musumeci
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 18, Iss 7, p 2289 (2018)
Sensors
Volume 18
Issue 7
Sensors (Basel) 18 (2018). doi:10.3390/s18072289
info:cnr-pdr/source/autori:Tudisco, Salvatore; La Via, Francesco; Agodi, Clementina; Altana, Carmen; Borghi, Giacomo; Boscardin, Maurizio; Bussolino, Giancarlo; Calcagno, Lucia; Camarda, Massimo; Cappuzzello, Francesco; Carbone, Diana; Cascino, Salvatore; Casini, Giovanni; Cavallaro, Manuela; Ciampi, Caterina; Cirrone, Giuseppe; Cuttone, Giacomo; Fazzi, Alberto; Giove, Dario; Gorini, Giuseppe; Labate, Luca; Lanzalone, Gaetano; Litrico, Grazia; Longo, Giuseppe; Lo Presti, Domenico; Mauceri, Marco; Modica, Roberto; Moschetti, Maurizio; Muoio, Annamaria; Musumeci, Franco; Pasquali, Gabriele; Petringa, Giada; Piluso, Nicolo; Poggi, Giacomo; Privitera, Stefania; Puglia, Sebastiana; Puglisi, Valeria; Rebai, Marica; Ronchin, Sabina; Santangelo, Antonello; Stefanini, Andrea; Trifiro, Antonio; Zimbone, Massimo/titolo:SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications/doi:10.3390%2Fs18072289/rivista:Sensors (Basel)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:18
Sensors, Vol 18, Iss 7, p 2289 (2018)
Sensors
Volume 18
Issue 7
Sensors (Basel) 18 (2018). doi:10.3390/s18072289
info:cnr-pdr/source/autori:Tudisco, Salvatore; La Via, Francesco; Agodi, Clementina; Altana, Carmen; Borghi, Giacomo; Boscardin, Maurizio; Bussolino, Giancarlo; Calcagno, Lucia; Camarda, Massimo; Cappuzzello, Francesco; Carbone, Diana; Cascino, Salvatore; Casini, Giovanni; Cavallaro, Manuela; Ciampi, Caterina; Cirrone, Giuseppe; Cuttone, Giacomo; Fazzi, Alberto; Giove, Dario; Gorini, Giuseppe; Labate, Luca; Lanzalone, Gaetano; Litrico, Grazia; Longo, Giuseppe; Lo Presti, Domenico; Mauceri, Marco; Modica, Roberto; Moschetti, Maurizio; Muoio, Annamaria; Musumeci, Franco; Pasquali, Gabriele; Petringa, Giada; Piluso, Nicolo; Poggi, Giacomo; Privitera, Stefania; Puglia, Sebastiana; Puglisi, Valeria; Rebai, Marica; Ronchin, Sabina; Santangelo, Antonello; Stefanini, Andrea; Trifiro, Antonio; Zimbone, Massimo/titolo:SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications/doi:10.3390%2Fs18072289/rivista:Sensors (Basel)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:18
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38ad01784d996865794d5514fde2bcb4
http://hdl.handle.net/10281/270864
http://hdl.handle.net/10281/270864