Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Mauricio P. Pires"'
Autor:
Mauricio P. Pires, R. Prioli, Robert Saraiva Matos, Henrique Duarte da Fonseca Filho, Patricia L. Souza
Publikováno v:
Microscopy Research and Technique. 85:1046-1055
In this work, the topographical effect of the scratching trajectory and the feed direction on the formation of lithographed lines on the (001) InP surface was investigated using an atomic force microscope (AFM) tip-based nanomachining approach. Nanos
Autor:
Edgard W. Costa, Daniel N. Micha, Rudy M.S. Kawabata, Luciana D. Pinto, Mauricio P. Pires, Patrícia L. Souza
Publikováno v:
Micro and Nanostructures. 180:207595
Autor:
Pedro H. Pereira, Germano M. Penello, Vitor B. Sousa, Rudy M. S. Kawabata, Mauricio P. Pires, Patricia L. Souza
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Autor:
David R Souza, Pedro H. Pereira, Luis A. Chipana, Patricia L. Souza, Mauricio P. Pires, Germano M. Penello
Publikováno v:
2022 36th Symposium on Microelectronics Technology (SBMICRO).
Autor:
Osvaldo M. Braga, Mauricio P. Pires, Cristian A. Delfino, R. M. S. Kawabata, Sanjay Krishna, G. S. Vieira, Euclydes Marega, L. D. Pinto, Patricia L. Souza, John A. Carlin
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
The use of epitaxial regrowth of InP on lattice-matched In0.53Ga0.47 As for passivation of photodiodes lateral mesa surfaces is investigated. The effect of the regrown layer was examined by photoluminescence and dark current measurements and compared
Autor:
Harald Schneider, Patricia L. Souza, Germano Maioli Penello, Pedro Henrique Pereira, Mauricio P. Pires, Manfred Helm
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-6
We present the concept of a leaky electronic state in the continuum in a semiconductor superlattice with a structural defect. The required conditions for such unusual electronic state were investigated through self- consistent simulations. The number
Autor:
Vitor Bento Souza, Mauricio P. Pires, Claire F. Gmachl, Deborah L. Sivco, Pedro Henrique Pereira, Germano Maioli Penello, Patricia L. Souza
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-5
In this work we present an InGaAs/InAlAs heterostructure lattice matched with InP that holds two leaky electronic states in the continuum. An optical analogy with Bragg mirrors is used to explain the origin and the desired characteristics of the leak
Autor:
Mauricio P. Pires, Clarissa de Paula Dias, R. Jakomin, Eleonora Cominato Weiner, R. M. S. Kawabata, Patricia L. Souza
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
Intermediate Band Solar Cells (IBSCs), are among the candidates for next-generation photovoltaic devices with improved efficiency, replacing the existing single junction solar cells. In this work, intermediate bands have been formed growing InAs quan
Autor:
Patricia L. Souza, Jose E. Ruiz, Vinicius R. Souza, Matheus S. Lacerda, Mauricio P. Pires, Germano Maioli Penello, Guilherme M. Torelly, Luis A. Chipana, Pedro Henrique Pereira, D. E. R. Souza
Publikováno v:
2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
We present e-mulate, an user-friendly software developed to calculate the electronic states of quantum well heterostructures. e-mulate was designed with a graphical user interface for users without previous coding skills. The unidimensional Schroding
Autor:
Maryam Al Huwayz, R. M. S. Kawabata, Mohamed Henini, Mauricio P. Pires, L. D. Pinto, R. Jakomin, Daniel Neves Micha, Lida Janeth CollazosPaz, Patricia L. Souza
Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices’ structures are almost identical, differing only in the growth tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8319d59a1ee547885635fbf798996a1