Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mauricio Banaszeski da Silva"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 459-465 (2022)
In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise. We derived analytical formulations for modeling the impact o
Externí odkaz:
https://doaj.org/article/9a5f98abc5b74578b554557d070039d5
Autor:
Mauricio Banaszeski da Silva, Gilson I. Wirth, Hans P. Tuinhout, Adrie Zegers-van Duijnhoven, Andries J. Scholten
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 70:2229-2242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3343cdc9d7b71099ae80921730348bd7
https://doi.org/10.1109/tcsi.2023.3261564
https://doi.org/10.1109/tcsi.2023.3261564
Autor:
Andries J. Scholten, Gilson Wirth, Thiago H. Both, Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 66:3521-3526
In this paper, we propose a novel compact statistical model for the low-frequency noise (LFN) of MOS devices with halo implants. The compact model is suited for the incorporation in modern models, such as BSIM, PSP, and EKV, and can be used to predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe6619d7b5bd411451457e312a2e2b3a
https://doi.org/10.1109/ted.2019.2924819
https://doi.org/10.1109/ted.2019.2924819
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
We discuss how charge trapping produces random telegraph noise (RTN) and low-frequency noise (1/f noise), working towards unified statistical modeling and parameter extraction. Modeling is based on discrete device physics quantities, which cause vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e5127b3ac5f982c3a1b90719d317e9
https://doi.org/10.1109/laedc51812.2021.9437944
https://doi.org/10.1109/laedc51812.2021.9437944
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
We review and critically discuss the unified statistical modeling of charge trapping in the context of 1/f noise, RTN and BTI. The focus is on circuit (electrical) level models to support circuit designers. Modeling is based on discrete device physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592a1a4774942b23bff0d2bafefabdc8
https://doi.org/10.1109/edtm50988.2021.9421005
https://doi.org/10.1109/edtm50988.2021.9421005
Autor:
Jeroen Croon, Gilson Wirth, Thiago H. Both, Adrie Zegers-van Duijnhoven, Hans Tuinhout, Mauricio Banaszeski da Silva, Andries J. Scholten
Publikováno v:
Noise in Nanoscale Semiconductor Devices ISBN: 9783030374990
With the scaling of transistor area and the introduction of high-k materials, the noise corner frequency—i.e., the frequency up to which flicker noise dominates over thermal or shot noise—is increased. This makes low-frequency noise (LFN) the dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6655368f52ccd27177debb3d8464f3b6
https://doi.org/10.1007/978-3-030-37500-3_15
https://doi.org/10.1007/978-3-030-37500-3_15
Autor:
Andries J. Scholten, Mauricio Banaszeski da Silva, Gilson Wirth, Adrie Zegers-van Duijnhoven, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 64:3331-3336
In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally uniform doping. The proposed model is suited for modern compact device models, such as PSP, BSIM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6250002b5f404e1f51eeee13bf6fbedd
https://doi.org/10.1109/ted.2017.2713301
https://doi.org/10.1109/ted.2017.2713301
Autor:
Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Andries J. Scholten, Hans Tuinhout, Thiago H. Both, Jeroen Croon, Gilson Wirth
Publikováno v:
IEEE Transactions on Electron Devices. 64:2919-2926
A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature. This technique reveals information about the mechanisms behind 1/ ${f}$ noise that is diffi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53eec9b774c52787c67760cc350bcc39
https://doi.org/10.1109/ted.2017.2703671
https://doi.org/10.1109/ted.2017.2703671
Autor:
Andries J. Scholten, Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Gilson Wirth, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 63:3683-3692
In this paper, we develop a statistical model for random telegraph noise (RTN) related low-frequency noise (LFN). With our proposed model, one can calculate the expected value and the variability of the noise as a function of bias and device paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eaefe3e3fe873e6fecea3a38efa79ba
https://doi.org/10.1109/ted.2016.2593916
https://doi.org/10.1109/ted.2016.2593916
Autor:
Andries J. Scholten, Adrie Zegers-van Duijnhoven, Thiago H. Both, Hans Tuinhout, Jeroen Croon, Mauricio Banaszeski da Silva, Gilson Wirth
Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
This paper presents a technique for statistical analysis of MOSFET low-frequency noise (LFN) based on the autocorrelation coefficient of numerous LFN power spectral density (PSD) spectra. This correlation analysis reveals information about physical m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3281eaab70a94a406c73c522195a2a62
https://doi.org/10.1109/icmts.2017.7954283
https://doi.org/10.1109/icmts.2017.7954283