Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Maureen A. Hanratty"'
Publikováno v:
IBM Journal of Research and Development. 41:105-118
As the limitations of conventional optical lithography approach, potential extensions of a current technology are examined more closely. One of these extensions is to limit the photoresist thickness that is needed for recording the imaging informatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4ed38f2f96bb98987bccf9ab1aed55
https://doi.org/10.1147/rd.411.0105
https://doi.org/10.1147/rd.411.0105
Publikováno v:
Journal of Photopolymer Science and Technology. 8:689-696
Process control in photolithography will be a key requirement for the successful manufacturing of 0.25 micron semiconductor products. A program to study photolithography process control techniques was recently undertaken at Texas Instruments. The tar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bb46297be94408855b5fd6b0634d510
https://doi.org/10.2494/photopolymer.8.689
https://doi.org/10.2494/photopolymer.8.689
Autor:
Sean C. O'Brien, D.D. White, Jimmy W. Hosch, Gregory B. Shinn, G.G. Barna, K. J. Brankner, Kelly J. Taylor, Roger A. Robbins, A. Lane, Maureen A. Hanratty, L.M. Loewenstein
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:149-158
This paper describes the equipment and processes utilized in the Microelectronics Manufacturing Science and Technology (MMST) program. The processes were carried out in a combination of testbeds (AVP, the TI designed and built Advanced Vacuum Process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b97263d50848e3e53450568672dac8
https://doi.org/10.1109/66.286851
https://doi.org/10.1109/66.286851
Publikováno v:
Applied optics. 29(21)
Atomic oxygen has been detected using the four-wave mixing technique of third harmonic generation (THG). Ground state O((3)P(j)) atoms, generated using a microwave discharge, were monitored by focusing a 391-nm dye laser beam into the post-discharge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f7432fcacf384fb2351069be949c41d
https://pubmed.ncbi.nlm.nih.gov/20567388
https://pubmed.ncbi.nlm.nih.gov/20567388
Autor:
T. Breedijk, D. Rogers, Maureen A. Hanratty, P. Mei, Ih-Chin Chen, Iqbal Ali, Jorge A. Kittl, Amitava Chatterjee, P. Nicollian, S. Murtaza, A. Amerasekera, Somnath S. Nag
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::867ae208e103ccc114f9f63d79938371
https://doi.org/10.1109/vtsa.1997.614744
https://doi.org/10.1109/vtsa.1997.614744
Publikováno v:
SPIE Proceedings.
This paper presents a methodology for modeling the space printability at the gate level in 193nm lithography. Spaces are shown to be more susceptible to process variations and lens aberrations than lines are. Experimental Scanning Electron Microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe41f307cb97174b103c5b5591086782
https://doi.org/10.1117/12.474512
https://doi.org/10.1117/12.474512
Autor:
Eden Zielinski, Wei W. Lee, Maureen A. Hanratty, Qizhi He, Abha Singh, Guoqiang Xing, D. Rogers
Publikováno v:
SPIE Proceedings.
Antireflective coatings (ARCs) have been used to enhance IC lithography for years, however, many conventional bottom ARCs can no longer maintain acceptable linewidth control, cannot meet stringent deep-UV (DUV) photoresist processing requirements, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbeaf2b50c65605a989912ee45d2e1eb
https://doi.org/10.1117/12.310763
https://doi.org/10.1117/12.310763
Publikováno v:
SPIE Proceedings.
We have investigated the use of annular illumination on a KrF excimer laser stepper ((lambda) equals 248 nm) working near the resolution limit of the lens. The numerical aperture of the lens was 0.48 and the illuminator-lens combination produced a pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d04b28fef5a701fc564560980cf2067
https://doi.org/10.1117/12.150421
https://doi.org/10.1117/12.150421
Autor:
Maureen A. Hanratty, Michael C. Tipton
Publikováno v:
SPIE Proceedings.
Deep UV lithography is an enabling technology for the fabrication of 64 megabit DRAM class devices. Wafer steppers operating at 248 nm currently provide both the resolution and the overlay capability to meet the stringent reguirements imposed by next
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b94824be9409eb6c156dd53148f413
https://doi.org/10.1117/12.130331
https://doi.org/10.1117/12.130331
Publikováno v:
SPIE Proceedings.
The diffusion enhanced silylated resist or DESIRER process is a well known surface imaging lithographic technique consisting of three steps: exposure, silylation, and dry develop. The success of this method for patterning submicron features depends c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f65543b9728188b8710ea89652adb01
https://doi.org/10.1117/12.56917
https://doi.org/10.1117/12.56917