Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Mauguin, Olivia"'
Autor:
Ghannam, Rana, Coulomb, Loic, Moll, Adrien, Bérardan, David, Maurin, David, Bantignies, Jean-Louis, Mauguin, Olivia, Vieira e Silva, Antonio, Rebière, Bertrand, Villeroy, Benjamin, Rouquette, Jérome, Chevallier, Geoffroy, Estournès, Claude, Viennois, Romain, Beaudhuin, Mickaël
Publikováno v:
In Journal of Alloys and Compounds 15 October 2024 1002
Autor:
Pantzas, Konstantinos, Beaudoin, Grégoire, Bailly, Myriam, Martin, Aude, Grisard, Arnaud, Dolfi, Daniel, Mauguin, Olivia, Largeau, Ludovic, Sagnes, Isabelle, Patriarche, Gilles
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at hig
Externí odkaz:
http://arxiv.org/abs/2101.03099
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Aubineau, Jérémie, Parat, Fleurice, Elghali, Abdellatif, Raji, Otmane, Addou, Aissam, Bonnet, Clément, Muñoz, Manuel, Mauguin, Olivia, Baron, Fabien, Jouti, Moulay Brahim, Yazami, Oussama Khadiri, Bodinier, Jean-Louis
Publikováno v:
In Chemical Geology 20 May 2022 597
Autor:
Lemaître, Aristide, Miard, Audrey, Travers, Laurent, Mauguin, Olivia, Largeau, Ludovic, Gourdon, Catherine, Jeudy, Vincent, Tran, Michael, George, Jean-Marie
Publikováno v:
Applied Physics Letters 93 (2008) 021123
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnet
Externí odkaz:
http://arxiv.org/abs/0807.0748
Autor:
Thevenard, Laura, Largeau, Ludovic, Mauguin, Olivia, Lemaître, Aristide, Khazen, Khashayar, Von Bardeleben, Jürgen
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017 cm-3 while
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702548
Autor:
Thevenard, Laura, Largeau, Ludovic, Mauguin, Olivia, Patriarche, Gilles, Lemaître, Aristide, Vernier, Nicolas, Ferré, Jacques
Publikováno v:
Physical Review B 73 (2006) 195331
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic
Externí odkaz:
http://arxiv.org/abs/cond-mat/0602388
Publikováno v:
Applied Physics Letters 87 (2005) 182506
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modific
Externí odkaz:
http://arxiv.org/abs/cond-mat/0504387
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Jakomin, Roberto, Beaudoin, Gregoire, Gogneau, Noelle, Lamare, Bruno, Largeau, Ludovic, Mauguin, Olivia, Sagnes, Isabelle
Publikováno v:
In Thin Solid Films 2011 519(13):4186-4191