Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Maud Nemoz"'
Autor:
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
Publikováno v:
APL Materials, Vol 12, Iss 3, Pp 039901-039901-2 (2024)
Externí odkaz:
https://doaj.org/article/8ba34bf2abe346928daf0ca12f2063a2
Autor:
Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier
Publikováno v:
APL Materials, Vol 11, Iss 3, Pp 031105-031105-6 (2023)
Due to its large piezoelectric and spontaneous polarization coefficients combined with the possibility of being grown lattice-matched with GaN, wide bandgap ScAlN is becoming a promising material in III-nitride semiconductor technology. In this work,
Externí odkaz:
https://doaj.org/article/710ed96f7898462db701fb087b2b14c7
Autor:
Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2404 (2023)
Aluminium Gallium Nitride (AlyGa1-yN) quantum dots (QDs) with thin sub-µm AlxGa1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN l
Externí odkaz:
https://doaj.org/article/844d92175fe6445c8ac7c5d3762bfe62
Autor:
Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Publikováno v:
Materials, Vol 15, Iss 23, p 8602 (2022)
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing
Externí odkaz:
https://doaj.org/article/cee7aa01f4be4e8e8af0afaf9067a2d9
Autor:
Julien Bosch, Lucie Valera, Chiara Mastropasqua, Adrien Michon, Maud Nemoz, Marc Portail, Jesús Zúñiga-Pérez, Maria Tchernycheva, Blandine Alloing, Christophe Durand
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, 2023, 275, pp.111995. ⟨10.1016/j.mee.2023.111995⟩
Microelectronic Engineering, 2023, 275, pp.111995. ⟨10.1016/j.mee.2023.111995⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e84fb623057272a0210b6f20c77fc0a9
https://hal.science/hal-04055437
https://hal.science/hal-04055437
Autor:
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
International audience; In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e99464295d6e8d6fbdb725e1ac0d3f14
https://hal.science/hal-03741626
https://hal.science/hal-03741626