Zobrazeno 1 - 10
of 530
pro vyhledávání: '"Matty, Caymax"'
Autor:
Geoffrey Pourtois, Benjamin Groven, Ankit Nalin Mehta, Hugo Bender, Paola Favia, Matty Caymax, Wilfried Vandervorst, A. Dabral, Jiongjiong Mo
Publikováno v:
The Journal of Physical Chemistry C. 124:6472-6478
Grain boundaries between 60° rotated and twinned crystals constitute the dominant type of extended line defects in two-dimensional transition metal dichalcogenides (2D MX2) when grown on a single c...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe3bce3ae5b380dbd80068aa39d127cc
https://doi.org/10.1021/acs.jpcc.0c01468
https://doi.org/10.1021/acs.jpcc.0c01468
Autor:
Yuanyuan Shi, Benjamin Groven, Quentin Smets, Surajit Sutar, Sreetama Banerjee, Henry Medina, Xiangyu Wu, Cedric Huyghebaert, Steven Brems, Dennis Lin, Pierre Morin, Matty Caymax, Inge Asselberghs, Iuliana Radu
Publikováno v:
IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f037e1e5142464a191d8844629d06952
https://doi.org/10.1109/iedm19574.2021.9720676
https://doi.org/10.1109/iedm19574.2021.9720676
Autor:
César J. Lockhart de la Rosa, Joan Teyssandier, Anton Brown, Steven De Feyter, Annelies Delabie, Haodong Zhang, Ken Verguts, Stefan De Gendt, John Greenwood, Matty Caymax, Miriam C. Rodríguez González, Brandon E. Hirsch, Steven Brems
Publikováno v:
Nanoscale. 13(28)
The integration of graphene, and more broadly two-dimensional materials, into devices and hybrid materials often requires the deposition of thin films on their usually inert surface. As a result, strategies for the introduction of surface reactive si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15fc989baf6dce8e0f7263082b0848f3
https://pubmed.ncbi.nlm.nih.gov/34254598
https://pubmed.ncbi.nlm.nih.gov/34254598
Autor:
Han, Han, Libor, Strakos, Thomas, Hantschel, Clement, Porret, Tomas, Vystavel, Roger, Loo, Matty, Caymax
Publikováno v:
Micron (Oxford, England : 1993). 150
Electron channeling contrast imaging (ECCI) is a powerful technique to characterize the structural defects present in a sample and to obtain relevant statistics about their density. Using ECCI, such defects can only be properly visualized, if the inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::48137b867e5bfccc084d809424fa3efb
https://pubmed.ncbi.nlm.nih.gov/34343885
https://pubmed.ncbi.nlm.nih.gov/34343885
Autor:
Ludovic Goux, R. Delhougne, Gouri Sankar Kar, Sven Van Elshocht, Christophe Detavernier, Wouter Devulder, Matty Caymax, Jan Willem Maes, Gabriel Khalil El Hajjam, Jean-Marc Girard, Karl Opsomer, Ali Haider, Johan Swerts, Shaoren Deng, Annelies Delabie, Michael Eugene Givens
Publikováno v:
MATERIALS ADVANCES
The ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e62b93c2d6d50a27c2fe78d325d76509
https://hdl.handle.net/1854/LU-8706073
https://hdl.handle.net/1854/LU-8706073
Autor:
E. Dupuy, Steven Brems, Devin Verreck, P. Morin, Cedric Huyghebaert, Goutham Arutchelvan, D. Radisic, Alain Phommahaxay, A. Thiam, Abhinav Gaur, Tom Schram, Matty Caymax, Koen Kennes, Katia Devriendt, Quentin Smets, W. Li, Inge Asselberghs, Thibaut Maurice, Iuliana Radu, Aryan Afzalian, Benjamin Groven, J-F de Marneffe, D. Lin, Daire J. Cott
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Double gated WS 2 transistors with gate length down to 18 nm are fabricated in a 300mm Si CMOS fab. By using large statistical data sets and mapping uniformity on full 300mm wafer, we built an integration vehicle where impact of each process step can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10f06bb0ae65bdc27f13c5df6895fabf
https://doi.org/10.1109/iedm13553.2020.9371926
https://doi.org/10.1109/iedm13553.2020.9371926
Autor:
Abhinav Gaur, Inge Asselberghs, Benjamin Groven, Iuliana Radu, Devin Verreck, Goutham Arutchelvan, Salim El Kazzi, Matty Caymax, Dennis Lin, J. Jussot, Ankit Nalin Mehta, Quentin Smets
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718f68fac0d2f494880582768debd06c
https://doi.org/10.1109/iedm19573.2019.8993650
https://doi.org/10.1109/iedm19573.2019.8993650
Autor:
Antoine Pacco, Nadine Collaert, Andreas Schulze, Matty Caymax, Libor Strakos, Wilfried Vandervorst, Roger Loo, Tomas Vystavel
Publikováno v:
Nanoscale. 10:7058-7066
Semiconductor heterostructures are at the heart of most nanoelectronic and photonic devices such as advanced transistors, lasers, light emitting diodes, optical modulators and photo-detectors. However, the performance and reliability of the respectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::669a008316fd2b9afd79c7e8297e9b4e
https://doi.org/10.1039/c8nr00186c
https://doi.org/10.1039/c8nr00186c
Autor:
Wilfried Vandervorst, Yashwanth Balaji, Ankit Nalin Mehta, Haodong Zhang, Iuliana Radu, Matty Caymax, Annelies Delabie, Marc Heyns
Publikováno v:
Journal of Materials Chemistry C. 6:6172-6178
© 2018 The Royal Society of Chemistry. SnS2 and SnS are two-dimensional (2D) semiconductors with distinct properties, as they exhibit a different type of conduction. They are of interest for applications in nanoelectronics, optoelectronics and senso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dacf1eef49c91a0f7cf03be8c7090f0a
https://doi.org/10.1039/c8tc01821a
https://doi.org/10.1039/c8tc01821a
Autor:
Libor Strakos, Thomas Hantschel, Han Han, Roger Loo, Matty Caymax, Clement Porret, Tomas Vystavel
Publikováno v:
Micron. 150:103123
Electron channeling contrast imaging (ECCI) is a powerful technique to characterize the structural defects present in a sample and to obtain relevant statistics about their density. Using ECCI, such defects can only be properly visualized, if the inf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce099b40e1e05bcb51b188a0f0da8b78
https://doi.org/10.1016/j.micron.2021.103123
https://doi.org/10.1016/j.micron.2021.103123