Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Mattias Kruskopf"'
Autor:
Yefei Yin, Atasi Chatterjee, Davood Momeni, Mattias Kruskopf, Martin Götz, Stefan Wundrack, Frank Hohls, Klaus Pierz, Hans W. Schumacher
Publikováno v:
Advanced Physics Research, Vol 1, Iss 1, Pp n/a-n/a (2022)
Abstract The outstanding properties and the potential for large‐scale fabrication open a wide field for electronic applications of epitaxial graphene on silicon carbide substrates. However, reliable doping methods to permanently control and tailor
Externí odkaz:
https://doaj.org/article/3dcf80f6845e489bab45409df8f56f0f
Autor:
Dinesh Patel, Martina Marzano, Chieh-I Liu, Heather M. Hill, Mattias Kruskopf, Hanbyul Jin, Jiuning Hu, David B. Newell, Chi-Te Liang, Randolph Elmquist, Albert F. Rigosi
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025112-025112-6 (2020)
The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These frac
Externí odkaz:
https://doaj.org/article/007325826f0040ddaabfeb49bf6d57fe
Autor:
Albert F. Rigosi, Chieh-I Liu, Bi Yi Wu, Hsin-Yen Lee, Mattias Kruskopf, Yanfei Yang, Heather M. Hill, Jiuning Hu, Emily G. Bittle, Jan Obrzut, Angela R. Hight Walker, Randolph E. Elmquist, David B. Newell
Publikováno v:
Data in Brief, Vol 20, Iss , Pp 1201-1208 (2018)
The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequent
Externí odkaz:
https://doaj.org/article/0fbfa92891c54c488204d48448d628ce
Autor:
Bernd Kästner, C. Magnus Johnson, Peter Hermann, Mattias Kruskopf, Klaus Pierz, Arne Hoehl, Andrea Hornemann, Georg Ulrich, Jakob Fehmel, Piotr Patoka, Eckart Rühl, Gerhard Ulm
Publikováno v:
ACS Omega, Vol 3, Iss 4, Pp 4141-4147 (2018)
Externí odkaz:
https://doaj.org/article/cb6be84a1b964d4f96ab034303dbd699
Autor:
Bernd Kästner, C. Magnus Johnson, Peter Hermann, Mattias Kruskopf, Klaus Pierz, Arne Hoehl, Andrea Hornemann, Georg Ulrich, Jakob Fehmel, Piotr Patoka, Eckard Rühl, Gerhard Ulm
Publikováno v:
ACS Omega, Vol 5, Iss 25, Pp 15762-15762 (2020)
Externí odkaz:
https://doaj.org/article/c0c52b7958d14e4e8ab25e37559f0dd4
Autor:
Michael B. Katz, Chieh-I. Liu, Mattias Kruskopf, Heather M. Hill, Angela R. Hight Walker, Randolph E. Elmquist, Albert V. Davydov, Albert F. Rigosi
Publikováno v:
MRS Communications. 12:1168-1173
Autor:
Atasi Chatterjee, Mattias Kruskopf, Stefan Wundrack, Peter Hinze, Klaus Pierz, Rainer Stosch, Hansjoerg Scherer
Publikováno v:
ACS Applied Electronic Materials. 4:5317-5325
The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of th
Autor:
Mattias Kruskopf, Albert F. Rigosi, S. Bauer, Martin Gotz, Eckart Pesel, Klaus Pierz, Jürgen Schurr, Atasi Chatterjee, Dinesh K. Patel, Randolph E. Elmquist, Yaowaret Pimsut
Publikováno v:
IEEE Trans Electron Devices
A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO)(3) to control the charge carrier density and h
Autor:
Guangjun Cheng, Bi-Yi Wu, Takashi Taniguchi, David B. Newell, Hanbyul Jin, Mattias Kruskopf, Randolph E. Elmquist, Albert F. Rigosi, Chi-Te Liang, Vishal Panchal, Jiuning Hu, Kenji Watanabe, Hsin-Yen Lee, Yanfei Yang
Publikováno v:
ACS Applied Electronic Materials. 2:204-212
Graphene ribbons, which may be fabricated by a wide variety of experimental techniques such as chemical processing, unzipping or etching of carbon nanotubes, molecular precursors, ion implantation,...
Autor:
Martina Marzano, Yaowaret Pimsut, Mattias Kruskopf, Yefei Yin, Marco Kraus, Vincenzo D’Elia, Luca Callegaro, Massimo Ortolano, Stephan Bauer, Ralf Behr
This paper describes an onsite comparison of two different digital impedance bridges when performing measurements on a quantum Hall resistance standard with the purpose of realizing the SI unit of capacitance, the farad. In the EMPIR Joint Research P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25376a6b646549dc2979417f697d3986
http://hdl.handle.net/11583/2972226
http://hdl.handle.net/11583/2972226