Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Mattias K. Juhl"'
Publikováno v:
Solar Energy. 202:420-428
Shingled solar modules are one of several technologies currently being considered to obtain higher solar module efficiencies. Using equivalent circuit modelling this paper investigates the robustness of shingled modules to partial shading with respec
Autor:
Johannes M. Greulich, Wiebke Wirtz, Hannes Höffler, Nico Wöhrle, Mattias K. Juhl, Oliver Kunz, Stefan Rein, Andreas W. Bett
The measurement of the current-voltage (IV) characteristics is the most important step for quality control and optimization of the fabrication process in research and industrial production of crystalline silicon solar cells. We propose a methodology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40b67a8c73b845cafd74a4ef2b9be482
https://publica.fraunhofer.de/handle/publica/439143
https://publica.fraunhofer.de/handle/publica/439143
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:217-228
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Light-induced degradation (LID) occurring on mainstream boron-doped silicon solar cells has been investigated for decades. Its relationship with boron and oxygen concentrations in crystalline silicon has made it widely accepted to be the cause of suc
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Outdoor Photoluminescence imaging of crystalline silicon photovoltaic modules in full daylight via contactless switching of the operating point was recently demonstrated. That previous method requires an optical modulator to be placed on at least two
Autor:
Daniel L. Lepkowski, Stephen Bremner, Jacob T. Boyer, Tyler J. Grassman, Hamid Mehrvarz, Mattias K. Juhl, Udo Römer, Zak H. Blumer, Anastasia Soeriyadi, Chuqi Yi, Tal Kasher, Steven A. Ringel, Anita Ho-Baillie
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Historically, the performance of monolithically-integrated GaAsP/Si tandem solar cells has been limited by the presence of elevated TDD in the GaAsP subcell. However, our recent development of low-TDD GaAsP/Si virtual substrates has greatly improved
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
The boron-oxygen defect density dependence on the boron concentration is taken for granted. Here we challenge that assumption and demonstrate that it is possible to predict the recombination activity of the boron-oxygen defect without assuming that t
Autor:
Steven A. Ringel, Daniel Derkacs, Zak H. Blumer, Stephen Bremner, Anita Ho-Baillie, Chuqi Yi, Anastasia Soeriyadi, Daniel L. Lepkowski, Alex Stavrides, Tyler J. Grassman, Mattias K. Juhl, Chris Kerestes, Jacob T. Boyer, Hamid Mehrvarz
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Detailed loss analysis of our previously reported 21.8% (unverified) monolithic GaAsP/Si tandem cells has identified and quantified three main mechanisms limiting cell performance: dislocation mediated voltage and current losses, improper bandgap pro
Publikováno v:
Solar Energy Materials and Solar Cells. 187:55-60
Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline s
Publikováno v:
IEEE Journal of Photovoltaics. 8:1413-1420
The surface recombination at metallized surfaces of a solar cell is of significant interest for cell process development, considering the limiting effect such recombination has on cell efficiency. This recombination is difficult to measure accurately