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pro vyhledávání: '"Mattias Dahlstrom"'
Autor:
Jeff A. Babcock, Alan Buchholz, Robert Malone, Mattias Dahlstrom, Marco Corsi, Alexei Sadovnikov, Hiroshi Yasuda, Joel M. Halbert, Jonggook Kim, Greg Cestra
Publikováno v:
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fd88d32864524f0ead08fa58a53fa5
https://doi.org/10.1109/bctm.2016.7738946
https://doi.org/10.1109/bctm.2016.7738946
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
An empirical reliability model is proposed here that is able to predict parameter degradation for a SiGe Hetero-junction Bipolar Transistor (HBT) by scaling stress time laterally producing a universal curve that describes whole time evolution of degr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a4db845def32252a35a35204060b3e0
https://doi.org/10.1109/bctm.2015.7340567
https://doi.org/10.1109/bctm.2015.7340567
Conference
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