Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mattia Segatto"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 324-333 (2022)
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
https://doaj.org/article/a306f22c7ffc44e4b50cf6dfde8d42f3
Autor:
Riccardo Fontanini, Mattia Segatto, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni Esseni
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1202-1209 (2021)
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for ne
Externí odkaz:
https://doaj.org/article/abff1f0ffb07401fa2146b6614938be0
Publikováno v:
IEEE Transactions on Electron Devices. 70:3037-3042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c65d7a8926607f4335099f1adb9eee1c
https://doi.org/10.1109/ted.2023.3265626
https://doi.org/10.1109/ted.2023.3265626
Autor:
Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, Riccardo Fontanini, David Esseni, Mattia Segatto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1202-1209 (2021)
An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d201a60ebe457fa7ed5b06c015196a7
https://doi.org/10.1109/jeds.2021.3120200
https://doi.org/10.1109/jeds.2021.3120200
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0927446895d2029f2adb49d56b1458d7
http://arxiv.org/abs/2201.12103
http://arxiv.org/abs/2201.12103
