Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Mattia Guacci"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 210-215 (2020)
Dynamic on-resistance (dRon), where the on-resistance immediately after turn-on is higher than the DC resistance, increases the conduction losses in power converters with gallium nitride high-electron-mobility transistors (GaN HEMTs). There exist no
Externí odkaz:
https://doaj.org/article/51ce59898a6a4791b875187c0d42ba2f
Autor:
Jon Azurza Anderson, Dominik Bortis, Johann W. Kolar, Kessy L. Pally, Gerald Deboy, Mattia Guacci, Juan Miguel Martinez Sanchez, Matthias Kasper
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:2238-2254
The increasing demand for higher power densities and higher efficiencies in power electronics, driven by the aerospace, electric vehicle, and renewable energy industries, encourages the development of new converter concepts. In particular, modular an
Autor:
Clemens Ostermaier, Dominik Neumayr, Morris Heller, Dominik Bortis, Mattia Guacci, Gerald Deboy, Oliver Häberlen, Johann W. Kolar
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 7:679-694
The unprecedented performance potential of gallium nitride-on-silicon (GaN-on-Si) high electron mobility transistors (HEMTs) is seen as the key enabler for the design of power converters featuring extreme power density figures, as demanded in next-ge
Autor:
Lukas Schrittwieser, Johann W. Kolar, Jon Azurza Anderson, Mattia Guacci, Eli J. Hanak, Gerald Deboy
Publikováno v:
CPSS Transactions on Power Electronics and Applications. 4:50-61
With the increasing use of photovoltaic systems, a large demand for efficient, power-dense and lightweight grid-interface inverters is arising. Accordingly, new concepts like multi-level converters, which are able to reduce the converter losses while
Publikováno v:
Electrical Engineering, 104 (2)
This paper analyzes the operation and characterizes the performance of a three-phase three-level (3-L) Sparse Neutral Point Clamped converter (SNPCC) for industrial variable speed drives (VSDs). The operating principle of the SNPCC, which advantageou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5f30f3dc411615e72cebb8b435d4cac
http://hdl.handle.net/11583/2907980
http://hdl.handle.net/11583/2907980
Autor:
Michael Antivachis, Michael Haider, Grayson Zulauf, Dominik Bortis, Gwendolin Rohner, J. Minibock, David Menzi, Spasoje Miric, J. Azurza Anderson, Panteleimon Papamanolis, Neha Nain, Mattia Guacci, Johann W. Kolar, Davide Cittanti, Pascal S. Niklaus
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Latest research results on three-phase wide-bandgap (WBG) inverter systems with full-sinewave output voltage filtering are reported. A new soft-switching modulation scheme for two-level 1200 V SiC inverters is described. Furthermore, a new Figure-of-
Publikováno v:
2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia).
A wide output voltage range EV charger employing a three-phase (3-Φ) buck-type current source rectifier (CSR)-stage and a series-connected boost-type DC/DC-stage is introduced. The system employs a novel control structure, enabling robust operation
Three-Phase Bidirectional Ultra-Wide Output Voltage Range Current DC-Link AC/DC Buck-Boost Converter
Publikováno v:
IECON
High power EV chargers connected to AC power distribution architectures employ a three-phase (3-Φ) PFC rectifier front-end and a series-connected isolated DC/DC converter to cover a wide range of traction battery voltages and efficiently supply the
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
High power EV chargers connected to an AC power distribution bus are employing a three-phase AC/DC Power Factor Correction (PFC) front-end and a series-connected isolated DC/DC converter to efficiently regulate the traction battery voltage and supply
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
State-of-the-art variable speed drive inverter systems are typically employing 1200 V Si IGBTs with antiparallel freewheeling diodes, resulting in a large overall semiconductor chip area, relatively high switching losses and/or low switching frequenc