Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Matthijn Dekkers"'
Autor:
Adam Raptakis, Lefteris Gounaridis, Jörn P. Epping, Thi Lan Anh Tran, Thomas Aukes, Moritz Kleinert, Madeleine Weigel, Marco Wolfer, Alexander Draebenstedt, Christos Tsokos, Panos Groumas, Efstathios Andrianopoulos, Nikos Lyras, Dimitrios Nikolaidis, Elias Mylonas, Nikolaos Baxevanakis, Roberto Pessina, Erik Schreuder, Matthijn Dekkers, Volker Seyfried, Norbert Keil, René G. Heideman, Hercules Avramopoulos, Christos Kouloumentas
Publikováno v:
PhotoniX, Vol 4, Iss 1, Pp 1-27 (2023)
Abstract We demonstrate a compact heterodyne Laser Doppler Vibrometer (LDV) based on the realization of optical frequency shift in the silicon nitride photonic integration platform (TriPleX). We theoretically study, and experimentally evaluate two di
Externí odkaz:
https://doaj.org/article/0950df73036f4e899d19cbf881c4b68a
Autor:
Muhammad Boota, Evert P. Houwman, Matthijn Dekkers, Minh D. Nguyen, Kurt H. Vergeer, Giulia Lanzara, Gertjan Koster, Guus Rijnders
Publikováno v:
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 45-57 (2016)
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The o
Externí odkaz:
https://doaj.org/article/b2fd42c2497f46c2a6fd2f67010e6708
Publikováno v:
APL Materials, Vol 5, Iss 7, Pp 074201-074201-7 (2017)
All-oxide free-standing cantilevers were fabricated with epitaxial (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) and Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PNZT) as piezoelectric layers and SrRuO3 electrodes. The ferroelectric and piezoelectric hysteresis loops wer
Externí odkaz:
https://doaj.org/article/3260c7c1deb24f9bbea668b3470c4cf1
Autor:
Minh D. Nguyen, Evert P. Houwman, Matthijn Dekkers, Chi T. Q. Nguyen, Hung N. Vu, Guus Rijnders
Publikováno v:
APL Materials, Vol 4, Iss 8, Pp 080701-080701-8 (2016)
Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% un
Externí odkaz:
https://doaj.org/article/51b8a18eb35c4794856e79768c6443db
Autor:
Alexandru Muller, Philipp Pirro, Mathias Weiler, Christoph Adelmann, Adrian Dinescu, Cristina Ciornei, Moritz Geilen, Matthijn Dekkers, Dan Vasilache, Alexandra Nicoloiu, Florin Ciubotaru, Lars Hess, Claudia Nastase, Ioana Zdru
A thin ScAlN layer was deposited on high resistivity (111) oriented silicon and two port surface acoustic wave (SAW) devices were manufactured, using advanced nanolithographic techniques, on this material. The Surface Acoustic Wave and Spin Wave (SAW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25530f9eef7e53c7fd30949750211c02
https://doi.org/10.36227/techrxiv.19486781
https://doi.org/10.36227/techrxiv.19486781
Autor:
Evert Pieter Houwman, Matthijn Dekkers, Guus Rijnders, Minh Nguyen, Gertjan Koster, Huiyu Yuan, Johan E. ten Elshof, Benjamin Wylie Van Eerd
Publikováno v:
ACS applied materials & interfaces, 9(41), 35947-35957. American Chemical Society
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
Nanosheet Ca2Nb3O10 (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir–Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr0.52Ti0.48)O3 (PZT) thin films using pulsed laser deposition (PLD) to enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::968d8b58294e60fdaeb1529408bde75c
https://doi.org/10.1021/acsami.7b07428
https://doi.org/10.1021/acsami.7b07428
Publikováno v:
ACS Applied Materials & Interfaces
ACS applied materials & interfaces, 9(11), 9849-9861. American Chemical Society
ACS applied materials & interfaces, 9(11), 9849-9861. American Chemical Society
Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a607aa2f881833409cc137355d90c118
https://doi.org/10.1021/acsami.6b16470
https://doi.org/10.1021/acsami.6b16470
Autor:
Gertjan Koster, Muhammad Boota, Matthijn Dekkers, Guus Rijnders, Minh D. Nguyen, Kurt Vergeer, Evert Pieter Houwman, Giulia Lanzara
Publikováno v:
Science and Technology of Advanced Materials
Science and technology of advanced materials, 17(1), 45-57. Taylor & Francis
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 45-57 (2016)
Science and technology of advanced materials, 17(1), 45-57. Taylor & Francis
Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 45-57 (2016)
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition. The o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a8ab621c3d78d5a4920217edc32e904
http://europepmc.org/articles/PMC5111568
http://europepmc.org/articles/PMC5111568
Autor:
Guus Rijnders, Matthijn Dekkers, Hien T. Vu, Hung N. Vu, Minh D. Nguyen, Evert Pieter Houwman
Publikováno v:
Materials letters, 164, 413-416. Elsevier
Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d51b88a9bc6acd321e19f5cc3806c93
https://doi.org/10.1016/j.matlet.2015.11.044
https://doi.org/10.1016/j.matlet.2015.11.044
Autor:
Marc Heyns, Xiao Sun, Samuel C. Bayer, Davide Tierno, Seth King, Paul Wittendorp, Matthijn Dekkers, Christoph Adelmann, Iuliana Radu, Sven Van Elshocht
The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd0355e1df238c2ee44b392753b8b27d
https://lirias.kuleuven.be/handle/123456789/625110
https://lirias.kuleuven.be/handle/123456789/625110