Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Matthieu Lafossas"'
Autor:
Thomas Kaltsounis, Helge Haas, Matthieu Lafossas, Simona Torrengo, Vishwajeet Maurya, Julien Buckley, Denis Mariolle, Marc Veillerot, Alain Gueugnot, Laurent Mendizabal, Yvon Cordier, Matthew Charles
Publikováno v:
Microelectronic Engineering. 273:111964
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac69f37f368818fdd2aad906e15d3e1
https://doi.org/10.1016/j.mee.2023.111964
https://doi.org/10.1016/j.mee.2023.111964
Autor:
Guy Feuillet, Jérôme Richy, Matthew Charles, Amelie Dussaigne, Victor Yon, Mrad Mrad, Christophe Licitra, Matthieu Lafossas, Joël Kanyandekwe
Publikováno v:
Gallium Nitride Materials and Devices XV.
InGaN-based devices have attracted a lot of attention, thanks to versatile optoelectronic applications. We show that the growth of these layers in an AIXTRON Close Coupled Showerhead is complicated due to the presence of gallium pollution in the cham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b390b3cd623710a109491885b5a8ab0
https://doi.org/10.1117/12.2544282
https://doi.org/10.1117/12.2544282
Autor:
Matthieu Lafossas, Amélie Dussaigne, Christophe Licitra, Matthew Charles, Jérôme Richy, Victor Yon, Guy Feuillet, Joël Kanyandekwe, Mrad Mrad
Publikováno v:
Journal of Crystal Growth. 536:125596
We show that gallium pollution in an AIXTRON Close Coupled Showerhead (CCS) Metal-Organic Vapor Phase Epitaxy (MOVPE) reactor can strongly affect the growth process stability of InGaN layers. By comparing growth with and without gallium pollution fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c01e4f501522d35140be9c8a92f62e5
https://doi.org/10.1016/j.jcrysgro.2020.125596
https://doi.org/10.1016/j.jcrysgro.2020.125596
Publikováno v:
physica status solidi (b). 257:1900576
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000118080527e6e2e9bc28acf8ce0b34
https://doi.org/10.1002/pssb.201900576
https://doi.org/10.1002/pssb.201900576
Autor:
Andreas Waag, A. Ribeaud, M. Rosina, Andrey Bakin, Pierre Ferret, Stéphane Brochen, Abdelhamid El-Shaer, I. C. Robin, Guy Feuillet, J. Garcia, Pascal Marotel, Vladimir Petukhov, Matthieu Lafossas
Publikováno v:
Journal of Crystal Growth. 311:2172-2175
The spectroscopic properties of ZnO epilayers grown by molecular beam epitaxy are investigated. Three samples are compared: a homoepitaxial layer grown on a Crystec substrate, a sample directly grown on c-sapphire and a layer grown on c-sappire using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11b0d7c6578e743d119efd6e254f2d7
https://doi.org/10.1016/j.jcrysgro.2008.10.078
https://doi.org/10.1016/j.jcrysgro.2008.10.078
Autor:
Guy Feuillet, Pierre-Henri Jouneau, I. C. Robin, Matthieu Lafossas, F. Levy, Milan Rosina, Pierre Ferret
Publikováno v:
Microelectronics Journal. 40:242-245
We report on ZnO nanorods grown by catalyst-free metal-organic chemical vapour deposition (MOCVD) in a commercial Epigress reactor using diethylzinc and N"2O as precursors. Well-aligned ZnO nanorods with uniform diameter, length and density have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb41ab8bb719f48e78439a8e8f7d4d8f
https://doi.org/10.1016/j.mejo.2008.07.019
https://doi.org/10.1016/j.mejo.2008.07.019
Autor:
Matthieu Lafossas, Stéphane Brochen, Pierre Ferret, Julien Pernot, Guy Feuillet, Rémy Obrecht, J.L. Santailler, Jean-Michel Chauveau
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2017, 121 (9), pp.095704. ⟨10.1063/1.4977506⟩
Journal of Applied Physics, 2017, 121 (9), pp.095704. ⟨10.1063/1.4977506⟩
Journal of Applied Physics, American Institute of Physics, 2017, 121 (9), pp.095704. ⟨10.1063/1.4977506⟩
Journal of Applied Physics, 2017, 121 (9), pp.095704. ⟨10.1063/1.4977506⟩
The electrical properties of ZnO mono-crystalline materials, either in the form of bulk crystals or epitaxial films, were investigated for a large range of un-intentional or intentional doping concentrations extending from 4.0 × 10 15 cm − 3 up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1540e0327f955fc2ffd1b99a35ea1a3
https://doi.org/10.1063/1.4977506
https://doi.org/10.1063/1.4977506
Autor:
Matthieu Lafossas, Christophe Durand, F. Levy, B. André, A.-L. Bavencove, Le Si Dang, B. Martin, Damien Salomon, Amélie Dussaigne, Joël Eymery, P. Gilet, Pierre Ferret
Publikováno v:
Electronics Letters. 47:765-767
A report is presented on the fabrication of light emitting diodes (LEDs) based on GaN core/shell wires on conductive substrates by metal organic vapour phase epitaxy. Catalyst-free GaN-based wires are grown spontaneously on 2-inch n-doped silicon sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b1bb8bced30e6c506db5899d22b64f
https://doi.org/10.1049/el.2011.1242
https://doi.org/10.1049/el.2011.1242
Autor:
Stéphane Brochen, Pierre Ferret, Guy Feuillet, Ivan-Christophe Robin, F. Gemain, Matthieu Lafossas, Julien Pernot
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
Journal of Applied Physics, American Institute of Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
Journal of Applied Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
Journal of Applied Physics, American Institute of Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩
ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90e76c6435c405b0b742efd105a96a85
https://hal.science/hal-00984425
https://hal.science/hal-00984425
Autor:
Pierre Ferret, Christophe Durand, Catherine Bougerol, Damien Salomon, Amélie Dussaigne, Joël Eymery, Matthieu Lafossas
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, SpringerOpen, 2013, 8 (1), pp.61. ⟨10.1186/1556-276X-8-61⟩
'Nanoscale Research Letters ', vol: 8, pages: 61-1-61-5 (2013)
Nanoscale Research Letters, 2013, 8 (1), pp.61. ⟨10.1186/1556-276X-8-61⟩
Nanoscale Research Letters, SpringerOpen, 2013, 8 (1), pp.61. ⟨10.1186/1556-276X-8-61⟩
'Nanoscale Research Letters ', vol: 8, pages: 61-1-61-5 (2013)
Nanoscale Research Letters, 2013, 8 (1), pp.61. ⟨10.1186/1556-276X-8-61⟩
Background III-Nitride semiconductor nanowires (NWs) have recently attracted great interest due to their potential applications including light-emitting diodes (LEDs), lasers, photodetectors, gas sensors and solar cells [1-5]. The direct growth of NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a82119256824c1ca1a8bd8bc87fbd71
https://hal.archives-ouvertes.fr/hal-00854179
https://hal.archives-ouvertes.fr/hal-00854179