Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Matthias Steidl"'
Autor:
Matthias Steidl, Mingjian Wu, Katharina Peh, Peter Kleinschmidt, Erdmann Spiecker, Thomas Hannappel
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in
Externí odkaz:
https://doaj.org/article/e9736c730d03402fb2d1315d433a37fa
Autor:
Andreas Nägelein, Thomas Hannappel, Cornelia Timm, Peter Kleinschmidt, Klaus Schwarzburg, Matthias Steidl
Publikováno v:
Solar Energy Materials and Solar Cells. 197:13-18
The efficiency of novel opto-electronic devices e.g. solar cells crucially depends on controlling the doping levels in the device. Decreasing the size of the structure by employing nanowires is attractive for several reasons, for instance reduced mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd13ada1c02f574d218c1579cf90e66
https://doi.org/10.1016/j.solmat.2019.03.049
https://doi.org/10.1016/j.solmat.2019.03.049
Publikováno v:
IEEE Journal of Photovoltaics. 9:673-678
Catalysis-assisted vapor–liquid–solid nanowire (NW) growth offers opportunities to prepare versatile, axial, and radial III–V homo- and hetero-structures, which combine multiple scientific and economic benefits including applications in innovat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af58118228dc04e187187998fe2009f
https://doi.org/10.1109/jphotov.2019.2894065
https://doi.org/10.1109/jphotov.2019.2894065
Autor:
Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:103-132
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68cfca3aec9e9e1bc214446d6723e9a4
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
Autor:
Oliver Supplie, Thomas Hannappel, W. Zhao, Matthias Steidl, Sebastian Brückner, Agnieszka Paszuk, Anja Dobrich, Peter Kleinschmidt
Publikováno v:
Applied Surface Science. 392:1043-1048
For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H 2 -based chemical vapor ambient as well a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1865e6dfac22563aa2743c8eb15c45fd
https://doi.org/10.1016/j.apsusc.2016.09.081
https://doi.org/10.1016/j.apsusc.2016.09.081
Autor:
Oleksandr Romanyuk, Oliver Supplie, Thomas Hannappel, Gernot Ecke, Pingo Mutombo, Christian Koppka, Peter Kleinschmidt, Andreas Nägelein, Stefan Krischok, Matthias Steidl, Agnieszka Paszuk, Theresa Berthold, Marcel Himmerlich
Publikováno v:
Applied Surface Science. 534:147346
Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabb414d67ad317370c036499b5b94ff
https://doi.org/10.1016/j.apsusc.2020.147346
https://doi.org/10.1016/j.apsusc.2020.147346
Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth
Autor:
Oliver Supplie, Matthias Steidl, Christian Koppka, Thomas Hannappel, Peter Kleinschmidt, Agnieszka Paszuk
Publikováno v:
Crystal Growth & Design. 16:6208-6213
Planar GaP epilayers on Si(111) are considered as virtual substrates for III–V-related optoelectronic devices such as high-efficiency nanowire-based tandem absorber structures for solar energy conversion, next generation LEDs, and fast photodetecto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d77ee48d9b09a75d70149f509ff085e
https://doi.org/10.1021/acs.cgd.6b00541
https://doi.org/10.1021/acs.cgd.6b00541
Autor:
Thomas Hannappel, Beatriz Galiana, Lars Winterfeld, Matthias Steidl, Erich Runge, Oliver Supplie, Christian Koppka, Peter Kleinschmidt, Katharina Peh
Publikováno v:
e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid
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Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor liquid solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c687fe85840f97c5ab973bf13ba6aaf1
https://doi.org/10.1021/acsnano.7b01228
https://doi.org/10.1021/acsnano.7b01228
Autor:
Oliver Supplie, Thomas Kups, G. Lilienkamp, Klaus Schwarzburg, Matthias Steidl, Peter Kleinschmidt, Thomas Hannappel, Beatriz Galiana
Publikováno v:
e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid
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Dilute nitride III-V nanowires (NWs) possess great potential as building blocks in future optoelectronical and electrochemical devices. Here, we provide evidence for the growth of GaP/GaPN core-shell NWs via metalorganic vapor phase epitaxy, both on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b17a7142a6fa85161178dd63e6065096
https://doi.org/10.1088/1361-6528/aaf607
https://doi.org/10.1088/1361-6528/aaf607
Autor:
Andreas Nägelein, Werner Prost, Bert Voigtländer, Peter Kleinschmidt, Vasily Cherepanov, Thomas Hannappel, Stefan Korte, Matthias Steidl
Publikováno v:
Journal of Physics: Condensed Matter. 31:074004
The charge transport through GaAs nanowires, partially p-doped and partially intrinsic, is analyzed by four-point resistance profiling along freestanding nanowires using a multip-STM. The charge transport channel in the undoped segment is assigned to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c5d177b9c2ebcddd4c98d5c600d6a76
https://doi.org/10.1088/1361-648x/aaf515
https://doi.org/10.1088/1361-648x/aaf515