Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Matthias Sinnwell"'
Autor:
Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 4, Iss , Pp 100171- (2023)
The lateral GaN power semiconductor technology enables monolithic integration of complete power converter topologies such as half-bridges, multi-phase and multi-level converters. Fabrication on Si substrates enables low-cost and mass production. Howe
Externí odkaz:
https://doaj.org/article/c17f0a3ec7564c29bf3e6c22c182473b
Autor:
Philipp Döring, Matthias Sinnwell, Stefan Müller, Heiko Czap, Rachid Driad, Peter Brückner, Klaus Kohler, Lutz Kirste, Michael Mikulla, Rüdiger Quay
In this work, a comprehensive study on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) regrown on Mg-implanted layers is shown. A comparably sharp doping profile into regrown AlGaN/GaN-stacks was verified by secondary-ion mass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f71101b93b1bd0a6e6ffce8e34b9cc11
https://publica.fraunhofer.de/handle/publica/442740
https://publica.fraunhofer.de/handle/publica/442740
Autor:
Philipp Döring, Matthias Sinnwell, Richard Reiner, Rachid Driad, Patrick Waltereit, Stefano Leone, Stefan Müller, Michael Mikulla, Oliver Ambacher
Non-linear output characteristics and the related turn-on voltages of GaN-based current aperture vertical electron transistors (CAVETs) are investigated experimentally. The resistive components are systematically analyzed in dependence of the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bb55acbee8257ca538d9d9c0bb5c664
https://doi.org/10.24406/publica-295
https://doi.org/10.24406/publica-295
Autor:
Matthias Sinnwell, Philipp Doering, Rachid Driad, Michael Dammann, Michael Mikulla, Rudiger Quay
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c08ece880d61341d9ab51cb2fc25ab4
https://doi.org/10.1109/wipda49284.2021.9645137
https://doi.org/10.1109/wipda49284.2021.9645137
Autor:
Patrick Waltereit, Beatrix Weiss, Oliver Ambacher, Michael Dammann, Richard Reiner, Thomas Gerrer, Matthias Sinnwell, Stefan Moench, Dirk Meder, Rudiger Quay
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers. The Si-removal method is explained and experimentally applied to PCB-embedded AlGaN/GaN-on-Si devices. The PCB-embedding package is reopened at the thermal pad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e562247997aaeb251b643f7f3691b6e0
https://doi.org/10.1109/ispsd46842.2020.9170078
https://doi.org/10.1109/ispsd46842.2020.9170078