Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Matthias Seelmann-Eggebert"'
Autor:
Matthias Seelmann-Eggebert, F. Schafer, Michael Schlechtweg, Mikko Kotiranta, Arnulf Leuther, Fabian Thome, Matthias Ohlrogge, Giuseppe Moschetti, Jens Goliasch, G. Wieching, Oliver Ambacher, Beatriz Aja
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:3139-3150
An investigation of metamorphic high electron mobility transistor stability at cryogenic temperature is presented in this paper. Unlike in the case of two-finger transistors, the measurements of cooled four-finger devices with large gate widths exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fee337917c369428b592a3a5c9524fa2
https://doi.org/10.1109/tmtt.2016.2598168
https://doi.org/10.1109/tmtt.2016.2598168
Autor:
Hermann Massler, Matthias Seelmann-Eggebert, Matthias Ohlrogge, Axel Tessmann, Michael Schlechtweg, Detlef Peschel, Oliver Ambacher, Rainer Weber, Arnulf Leuther, M. Riessle
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:2335-2342
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fb37c4a5e39d7f8280f9761072392c
https://doi.org/10.1109/tmtt.2015.2436919
https://doi.org/10.1109/tmtt.2015.2436919
Autor:
D. Bruch, B. Baldischweiler, Giuseppe Moschetti, Matthias Seelmann-Eggebert, Oliver Ambacher, Beatriz Aja, Michael Schlechtweg, Hermann Massler
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 28:684-697
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobility transistor (HEMT) devices and analyze the problems encountered with conventional extraction techniques. HEMT devices are distinguished by a very s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9ec97c1d2e56992c0fe539651a59f50
https://doi.org/10.1002/jnm.2054
https://doi.org/10.1002/jnm.2054
Autor:
Ernst Weissbrodt, Markus Rosch, Matti Kaisti, Iiro Sundberg, P. Jukkala, Matthias Seelmann-Eggebert, Torsti Poutanen, P. Piironen, Mikko Kantanen, Arnulf Leuther, Michael Schlecthweg, Miikka Altti, Jussi Varis
Publikováno v:
Kantanen, M, Weissbrodt, E, Varis, J, Leuther, A, Seelmann-Eggebert, M, Rösch, M, Schlecthweg, M, Poutanen, T, Sundberg, I, Kaisti, M, Altti, M, Jukkala, P & Piironen, P 2015, ' Active cold load MMICs for Ka-, V-, and W-bands ', IET Microwaves, Antennas and Propagation, vol. 9, no. 8, pp. 742-747 . https://doi.org/10.1049/iet-map.2014.0243
Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aac9cc4cb276350a66aff1bc9170161b
https://cris.vtt.fi/en/publications/e9dce672-8435-4f57-8b28-14a04f00c343
https://cris.vtt.fi/en/publications/e9dce672-8435-4f57-8b28-14a04f00c343
Autor:
Matthias Seelmann-Eggebert, Tapani Narhi, Sylvain Caujolle-Bert, Mikko Kärkkäinen, Arnulf Leuther, Mikko Kantanen, Mikko Varonen, Ari Alanne, P. Jukkala, Kari Halonen, Rainer Weber
Publikováno v:
Kärkkäinen, M, Kantanen, M, Caujolle-Bert, S, Varonen, M, Weber, R, Leuther, A, Seelmann-Eggebert, M, Alanne, A, Jukkala, P, Närhi, T & Halonen, K A I 2014, ' MHEMT G-band low-noise amplifiers ', IEEE Transactions on Terahertz Science and Technology, vol. 4, no. 4, pp. 459-468 . https://doi.org/10.1109/TTHZ.2014.2327383
To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f4568a1a912dfa1865ed86c7ad6796b
https://doi.org/10.1109/TTHZ.2014.2327383
https://doi.org/10.1109/TTHZ.2014.2327383
Autor:
Ulf Schmid, Friedbert van Raay, H. Sledzik, P. Schuh, Matthias Seelmann-Eggebert, Peter Brückner, Rudiger Quay, Jorg Schroth, Martin Oppermann
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:3043-3051
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71eee6b3dd3446a3ee399db4b4940890
https://doi.org/10.1109/tmtt.2013.2268055
https://doi.org/10.1109/tmtt.2013.2268055
Autor:
Matthias Seelmann-Eggebert, Arnulf Leuther, Matthias Ohlrogge, Hermann Mabler, Rainer Weber, Axel Tessmann, Oliver Ambacher, Michael Schlechtweg
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
In this paper we present a new small signal multiport modelling approach for III–V High Electron Mobility Transistors (HEMT) that is capable for internal transistor analysation and optimization as well as scaleable in gate width and finger-number.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38af14407f709d5980c5dbc695df434a
https://doi.org/10.1109/mwsym.2016.7540043
https://doi.org/10.1109/mwsym.2016.7540043
Autor:
Matthias Seelmann-Eggebert, Enrique Villa, Hermann Massler, Arnulf Leuther, D. Bruch, J. D. Gallego-Puyol, Michael Schlechtweg, I. Malo-Gomez, B. Baldischweiler, Beatriz Aja Abelán, C. Diez-Gonzalez, Eduardo Artal, I. Lopez-Fernandez
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:4080-4088
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09a96a0caf0d1329c6bad03c23a5c87e
https://doi.org/10.1109/tmtt.2012.2221735
https://doi.org/10.1109/tmtt.2012.2221735
Autor:
M. Zink, R. Loesch, Ingmar Kallfass, Matthias Seelmann-Eggebert, Michael Schlechtweg, Arnulf Leuther, Volker Hurm, Hermann Massler, M. Riessle, Oliver Ambacher, Axel Tessmann, M. Kuri
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:2193-2202
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors and high-data-rate wireless communication systems, operating in the 300-500-GHz frequency regime.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db3cb7b507880537d2f0c64f4bf84b46
https://doi.org/10.1109/jssc.2011.2163212
https://doi.org/10.1109/jssc.2011.2163212
Autor:
Matthias Seelmann-Eggebert, Hermann Massler, Arnulf Leuther, Axel Tessmann, S. Koch, P. Pahl, Oliver Ambacher, Sebastian Diebold, Ingmar Kallfass
Publikováno v:
International Journal of Microwave and Wireless Technologies. 3:339-346
The high millimeter-wave (mmW) frequency range offers new possibilities for high-resolution imaging and sensing as well as for high data rate wireless communication systems. The use of power amplifiers of such systems boosts the performance in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb0ba2e75bbd746cde8e06fe4b52ea0b
https://doi.org/10.1017/s1759078711000432
https://doi.org/10.1017/s1759078711000432