Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Matthias Reinwald"'
Autor:
Bruno Küng, Simon Gustavsson, Theodore Choi, Ivan Shorubalko, Oliver Pfäffli, Fabian Hassler, Gianni Blatter, Matthias Reinwald, Werner Wegscheider, Silke Schön, Thomas Ihn, Klaus Ensslin
Publikováno v:
Entropy, Vol 12, Iss 7, Pp 1721-1732 (2010)
Charge sensing with quantum point-contacts (QPCs) is a technique widely used in semiconductor quantum-dot research. Understanding the physics of this measurement process, as well as finding ways of suppressing unwanted measurement back-action, are th
Externí odkaz:
https://doaj.org/article/05e2ed559a5843cb90a80d16ee89c7a0
Autor:
Giorgio Rossi, Georg Woltersdorf, M. Hochstrasser, Matthias Sperl, Matthias Reinwald, Werner Wegscheider, G. Panaccione, Christian H. Back, Francesco Maccherozzi
Publikováno v:
Surface science 601 (2007): 4283–4287.
info:cnr-pdr/source/autori:Maccherozzi, F; Panaccione, G; Rossi, G; Hochstrasser, M; Sperl, M; Reinwald, M; Woltersdorf, G; Wegscheider, W; Back, CH/titolo:Surface treatments and magnetic properties of Ga1-xMnxAs thin films/doi:/rivista:Surface science/anno:2007/pagina_da:4283/pagina_a:4287/intervallo_pagine:4283–4287/volume:601
info:cnr-pdr/source/autori:Maccherozzi, F; Panaccione, G; Rossi, G; Hochstrasser, M; Sperl, M; Reinwald, M; Woltersdorf, G; Wegscheider, W; Back, CH/titolo:Surface treatments and magnetic properties of Ga1-xMnxAs thin films/doi:/rivista:Surface science/anno:2007/pagina_da:4283/pagina_a:4287/intervallo_pagine:4283–4287/volume:601
As a diluted magnetic semiconductor (DMS), (Ga,Mn)As is a possible candidate for the realization of spintronics devices, due to its intrinsic compatibility with GaAs based electronics. The low Curie temperature still limits its use for practical devi
Autor:
Simon Gustavsson, A. C. Gossard, Thomas Ihn, Werner Wegscheider, D. C. Driscoll, Klaus Ensslin, Matthias Reinwald, Martin Sigrist
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:5-8
Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the
Autor:
Matthias Döppe, Ursula Wurstbauer, Werner Wegscheider, Hans-Peter Tranitz, Klaus Wagenhuber, Wolfgang Kipferl, Matthias Reinwald, Dieter Weiss
Publikováno v:
Journal of Crystal Growth. 278:690-694
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs sub
Autor:
S. Sedlmaier, H. Hajak, Gerhard Abstreiter, Werner Wegscheider, Max Bichler, P. Vogl, Gert Schedelbeck, Michael Stopa, Stefan Birner, Matthias Reinwald, Robert Schuster, Dieter Schuh, Johann Bauer
Publikováno v:
physica status solidi (c). 1:2028-2055
An overview of the cleaved edge overgrowth technique, which allows the realization of atomically precise quantum structures, is presented. We explain the origin of the formation of quantum wires, which were grown with this molecular beam epitaxy meth
Autor:
Werner Wegscheider, Gerhard Abstreiter, Matthias Reinwald, Dieter Schuh, Max Bichler, Robert Schuster, H. Hajak
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:236-240
The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In 0 . 2 Al 0 . 8 As stressor layers and the overgrown (110) GaAs quantum well
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 34:497-499
Low-temperature transport measurements were performed on a two-terminal Aharonov–Bohm interferometer with one Coulomb-blockaded quantum dot (QD) embedded in each of the two interfering paths. Layered local anodic oxidation of the Ga[Al]As heterostr
Autor:
Dieter Schuh, Werner Wegscheider, Max Bichler, Gerhard Abstreiter, H. Hajak, Matthias Reinwald, Robert Schuster
Publikováno v:
Applied Physics Letters. 85:3672-3674
We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely
Autor:
Thomas Ihn, Magdalena Huefner, Bruno Kueng, Klaus Ensslin, Matthias Reinwald, S. Schnez, Werner Wegscheider
Publikováno v:
Physical Review B. 83
The metallic tip of a scanning force microscope operated at $300\text{}\mathrm{m}\mathrm{K}$ is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using s
Autor:
Werner Wegscheider, Oliver Pfäffli, B. Küng, Ivan Shorubalko, Fabian Hassler, Silke Schön, Gianni Blatter, Simon Gustavsson, T. Choi, Matthias Reinwald, Klaus Ensslin, Thomas Ihn
Publikováno v:
MDPI
Entropy; Volume 12; Issue 7; Pages: 1721-1732
Entropy, 12 (7)
Entropy, Vol 12, Iss 7, Pp 1721-1732 (2010)
Entropy; Volume 12; Issue 7; Pages: 1721-1732
Entropy, 12 (7)
Entropy, Vol 12, Iss 7, Pp 1721-1732 (2010)
Charge sensing with quantum point-contacts (QPCs) is a technique widely used in semiconductor quantum-dot research. Understanding the physics of this measurement process, as well as finding ways of suppressing unwanted measurement back-action, are th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30536be1d6b2ac2ef2452565197753da
http://hdl.handle.net/1721.1/66493
http://hdl.handle.net/1721.1/66493