Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Matthias Lamprecht"'
4
Nonlinear mechanical model of the shaft of a roll forming mill and parameter identification
Autor: Yury Vetyukov, Matthias Lamprecht, Martin Leonhartsberger, Friedrich Bleicher, Emin Kocbay
Publikováno v: The International Journal of Advanced Manufacturing Technology. 112:3363-3375
Roll forming is a continuous process in which a moving metal sheet passes through numerous pairs of opposing forming rolls. The shafts of the roll forming mill are equipped with these rolls and must be set up and aligned to achieve the required final
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89aac4bafc6e5074aa08e80c1a57ebcb
https://doi.org/10.1007/s00170-020-06412-5
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7
Determination of donor and DX center capture characteristics by pulsed photoluminescence
Autor: Matthias Lamprecht, Klaus Thonke
Publikováno v: Journal of Applied Physics. 123:095704
In AlN, several broad defect-related photoluminescence bands in the range from 1.6 eV to 2.4 eV have been observed and were associated with donor or DX– to deep electron trap transitions. By the variation of the length of sub-bandgap laser excitati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8a93b1139555bfc1b75f768755a6e849
https://doi.org/10.1063/1.5024345
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8
Optical signatures of silicon and oxygen related DX centers in AlN
Autor: Ramon Collazo, Klaus Thonke, Matthias Lamprecht, Zlatko Sitar
Publikováno v: physica status solidi (a). 214:1600749
Bulk AlN crystals typically contain high concentrations of oxygen, silicon, and carbon − as also state-of-the art epitaxial layers typically do, depending on the specific growth conditions. In optical spectroscopy, such crystals show broad bands in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::772d0d370c19513bfc9ef34ea6a85d22
https://doi.org/10.1002/pssa.201600749
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9
Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN
Autor: V. N. Jmerik, Ramon Collazo, Zlatko Sitar, Stefan Ivanov, Matthias Lamprecht, Klaus Thonke
Publikováno v: physica status solidi (b). 254:1600714
We report on defect-related photoluminescence bands in the range from 1.4 to 2.4 eV in aluminum nitride bulk crystals and layers. Using continuous photoluminescence, photoluminescence excitation, and time-resolved photoluminescence spectroscopy, we a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8487d270677cec0c3a1d8080295c735d
https://doi.org/10.1002/pssb.201600714
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10
Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states
Autor: Christiane Grund, Klaus Thonke, Ramon Collazo, Sebastian Bauer, Matthias Lamprecht, Zlatko Sitar
Publikováno v: physica status solidi (b). 254:1600338
We report on a defect-related broad emission band at around 2.05 eV in bulk aluminum nitride crystals nominally undoped, but containing high concentrations of carbon, oxygen, and silicon. Time-resolved photoluminescence spectroscopy yields two differ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0acbc84d1830d72b133368b2a90d91a8
https://doi.org/10.1002/pssb.201600338
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