Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Matthias Kocher"'
Autor:
Holger Schlichting, Tobias Erlbacher, Matthias Kocher, Mathias Rommel, Birgit Kallinger, Anton J. Bauer
Publikováno v:
Materials Science Forum. 1004:299-305
In this study, UV Photoluminescence (UVPL) and Differential Interference Contrast (DIC) mapping was applied for process control of a 1.2 kV 4H-SiC VDMOS fabrication process at different process stages in order to investigate the influence of shallow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e016228840a44defdbd694bc8cf1ae25
https://doi.org/10.4028/www.scientific.net/msf.1004.299
https://doi.org/10.4028/www.scientific.net/msf.1004.299
Autor:
Julietta Weisse, Matthias Kocher, Anton J. Bauer, Zongwei Xu, Tobias Erlbacher, Mathias Rommel, B.T. Yao
Publikováno v:
Materials Science Forum. 963:445-448
The prediction of the compensation induced hole concentration reduction in implanted Al regions is a key parameter in developing high power SiC devices. Hall effect measurements are commonly used to determine the compensation ratio of Al implanted re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97b8dd93a2da522484e170fa9ef02227
https://doi.org/10.4028/www.scientific.net/msf.963.445
https://doi.org/10.4028/www.scientific.net/msf.963.445
Autor:
Zhongdu He, Hong Wang, Mathias Rommel, Lei Liu, Ying Song, B.T. Yao, Zongwei Xu, Matthias Kocher, Fengzhou Fang, Tao Liu
Publikováno v:
Materials Science Forum. 963:424-428
Raman spectroscopy and sheet resistance measurements were used to study the preparation processes of low-resistance p-type 4H-SiC by Al ion implantation with ion doses of 2.45×1012 - 9.0×1014 cm-2 and annealing treatment with temperatures of 1700 -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeaa3a026d76715de99179c10eec37e4
https://doi.org/10.4028/www.scientific.net/msf.963.424
https://doi.org/10.4028/www.scientific.net/msf.963.424
Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC
Publikováno v:
Materials Science Forum. 924:393-396
TLM structures on Al-implanted regions with different implanted Al concentrations and different annealing temperatures were processed and characterized by electrical measurements in order to determine the influence of these parameters on the ohmic re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2882286f53f707fbb9e192bc742d6ea2
https://doi.org/10.4028/www.scientific.net/msf.924.393
https://doi.org/10.4028/www.scientific.net/msf.924.393
Publikováno v:
Materials, Vol 15, Iss 50, p 50 (2022)
Materials; Volume 15; Issue 1; Pages: 50
Materials
Materials; Volume 15; Issue 1; Pages: 50
Materials
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41dae91caac7f08c3fdcea6dca48976a
https://doi.org/10.3390/ma15010050
https://doi.org/10.3390/ma15010050
Publikováno v:
Materials Science Forum. 897:287-290
Point contact current voltage (PCIV) measurements were performed on 4H-SiC samples, both for n- an p-doped epitaxial layers as well as samples with rather shallow doping profiles realized by N- or Al-implantation in a range from 1016 cm-3 to 1019 cm-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f7ac463a5a833ddc6ee8e4927b77478
https://doi.org/10.4028/www.scientific.net/msf.897.287
https://doi.org/10.4028/www.scientific.net/msf.897.287
The compensation of charge carriers is an important aspect to be considered in Aluminum doped areas in 4H-SiC. In this paper, a straightforward method has been found to implement compensation effects into a basic device simulation model and to improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b32d0e552b2937b881b4e9ce3c13649
Autor:
Anton J. Bauer, Gian Domenico Licciardo, Tobias Erlbacher, Alfredo Rubino, Luigi Di Benedetto, Christian D. Matthus, Matthias Kocher
For the first time, we report on the performances of 4H-SiC p-i-n-diode temperature sensors for operating temperatures between 20.5 and 802 K. In this huge temperature range, three ranges of performance were identified with the limit temperatures at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::512ebddfafd57970c60d105775a0d751
https://publica.fraunhofer.de/handle/publica/255675
https://publica.fraunhofer.de/handle/publica/255675
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
The influence of the high temperature annealing on differently implanted Al profiles was investigated by SIMS measurements. Depending on the implanted dose and also depending on the local concentration a significant diffusion of the implanted Al was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292eaf63a91adecb165645b41841486c
https://doi.org/10.1109/iit.2018.8807904
https://doi.org/10.1109/iit.2018.8807904
The possibility to analyze micrometer scaled 2D implantation profiles is essential for improving SiC power devices. Due to the fact that the oxidation rate depends on the doping concentration a rather simple method was developed in order to decorate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a20c85f09e6f77bf0282f673a3038075