Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Matthias Bickermann"'
Autor:
Zbigniew Galazka, Steffen Ganschow, Robert Schewski, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Mike Pietsch, Andreas Fiedler, Isabelle Schulze-Jonack, Martin Albrecht, Thomas Schröder, Matthias Bickermann
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022512-022512-12 (2019)
Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 °C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are
Externí odkaz:
https://doaj.org/article/d858b5e8bb4347ca85892eb17ac1fc82
Autor:
Thomas Straubinger, Carsten Hartmann, Merve P. Kabukcuoglu, Martin Albrecht, Matthias Bickermann, Andrew Klump, Simon Bode, Elias Hamann, Simon Haaga, Mathias Hurst, Thomas Schröder, Daniel Hänschke, Carsten Richter
Publikováno v:
Crystal Growth & Design. 23:1538-1546
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02301f5b89e12fd53ab8f4d1caaf8034
https://doi.org/10.1021/acs.cgd.2c01131
https://doi.org/10.1021/acs.cgd.2c01131
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 147:7133-7139
By differential thermal analysis, a concentration field suitable for the growth of Zr, Mg co-doped strontium hexagallate crystals was observed that corresponds well with known experimental results. It was shown that the melting point of doped crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5379827d6d0db1efd677820dfeabf217
https://doi.org/10.1007/s10973-021-11050-4
https://doi.org/10.1007/s10973-021-11050-4
Autor:
Isabelle Hanke, Detlef Klimm, Thomas Schroeder, Klaus Irmscher, Zbigniew Galazka, Mike Pietsch, Detlev Schulz, Matthias Bickermann, Steffen Ganschow
Publikováno v:
Journal of Materials Research. 36:4746-4755
Abstract We provide a comparative study of basic electrical properties of bulk single crystals of transparent semiconducting oxides (TSOs) obtained directly from the melt (9 compounds) and from the gas phase (1 compound), including binary (β-Ga2O3,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d0803d78eea9f0884a5fca4c0adede
https://doi.org/10.1557/s43578-021-00353-9
https://doi.org/10.1557/s43578-021-00353-9
Autor:
Klaus Irmscher, T. Straubinger, L. Matiwe, Jürgen Wollweber, Carsten Hartmann, Matthias Bickermann, Ivan Gamov
Publikováno v:
CrystEngComm. 22:1762-1768
We report on the growth and characterization of bulk AlN crystals prepared using five different growth conditions (seed temperatures and temperature differences between source and seed) in an otherwise identical growth setup. The experimentally deter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2befea61ee9f57dd8367d4fb7bdb21a5
https://doi.org/10.1039/c9ce01952a
https://doi.org/10.1039/c9ce01952a
Autor:
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Steffen Ganschow, Albert Kwasniewski, Palvan Seyidov, Mike Pietsch, Andrea Dittmar, Saud Bin Anooz, Klaus Irmscher, Manuela Suendermann, Detlef Klimm, Ta-Shun Chou, Jana Rehm, Thomas Schroeder, Matthias Bickermann
Publikováno v:
Journal of Applied Physics. 133:035702
We have systematically studied the growth, by the Czochralski method, and basic physical properties of a 2 cm and 2 in. diameter bulk β-(AlxGa1−x)2O3 single crystal with [Al] = 0–35 mol. % in the melt in 5 mol. % steps. The segregation coefficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1f9c68c2beaf49705f995a7d5460c2
https://doi.org/10.1063/5.0131285
https://doi.org/10.1063/5.0131285
Autor:
Detlef Klimm, Binderiya Amgalan, Steffen Ganschow, Albert Kwasniewski, Zbigniew Galazka, Matthias Bickermann
Publikováno v:
Crystal Research and Technology. 58:2200204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28da8657a51d006af983e5da98991997
https://doi.org/10.1002/crat.202200204
https://doi.org/10.1002/crat.202200204
Autor:
Markus Weyers, Andrea Dittmar, Uta Juda, Carsten Netzel, Jürgen Wollweber, Carsten Hartmann, Arne Knauer, Anna Mogilatenko, Jörg Jeschke, Ralph-Stephan Unger, Matthias Bickermann, Ute Zeimer
Publikováno v:
Journal of Crystal Growth. 505:69-73
MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0a2825d0ea7fa1f33062b20cea006f
https://doi.org/10.1016/j.jcrysgro.2018.10.021
https://doi.org/10.1016/j.jcrysgro.2018.10.021
Autor:
Zbigniew Galazka, Steffen Ganschow, Palvan Seyidov, Klaus Irmscher, Mike Pietsch, Ta-Shun Chou, Saud Bin Anooz, Raimund Grueneberg, Andreas Popp, Andrea Dittmar, Albert Kwasniewski, Manuela Suendermann, Detlef Klimm, Thomas Straubinger, Thomas Schroeder, Matthias Bickermann
Publikováno v:
Applied Physics Letters. 120:152101
Two inch diameter, highly conducting (Si-doped) bulk β-Ga2O3 single crystals with the cylinder length up to one inch were grown by the Czochralski method. The obtained crystals revealed high structural quality characterized by narrow x-ray rocking c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725502fee68525ea1699f8453dd87cc8
https://doi.org/10.1063/5.0086996
https://doi.org/10.1063/5.0086996
Autor:
Lucinda Matiwe, Carsten Hartmann, Leonardo Cancellara, Matthias Bickermann, Andrew Klump, Jürgen Wollweber, Sylvia Hagedorn, Markus Weyers, Thomas Straubinger
Publikováno v:
physica status solidi (a). 219:2100707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645a2d56195a537017792dbe75be45e7
https://doi.org/10.1002/pssa.202100707
https://doi.org/10.1002/pssa.202100707