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Autor:
Jens Niederhausen, Silke Christiansen, Klaus Lips, Marcus Bär, Regan G. Wilks, Matthias Büchele, Roberto Félix, Sara Jäckle, Martin Liebhaber
Publikováno v:
ACS applied materialsinterfaces. 8(13)
We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PSS), which is successfully applied as a hole selective contact in hybrid so