Výsledky vyhledávání - "Matthew Whiteside"

Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films: evaluation as thermally self-dissipating dielectrics for GaN transistors

Autor: Matthew Whiteside, Zehui Du, Edwin Hang Tong Teo, Zhi Kai Ng, Maziar Shakerzadeh, Minmin Zhu, Soon Siang Chng, Xizu Wang, Siu Hon Tsang

Publikováno v: Journal of Materials Chemistry C. 8:9558-9568

High performance tuneable dielectrics at millimetre-wave frequencies are crucial constituents for emerging adaptive and reconfigurable electronic applications in the automotive, artificial intelligence, and telecommunication industries. Hexagonal bor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d11bfaffafbc4681ea2a0242099c7a3d
https://doi.org/10.1039/d0tc02253e

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Elektronická kniha

Programming Puzzles: Python Edition : The Guide to Sharpen Your Coding Skills with Engaging and Challenging Puzzles

Autor: Matthew Whiteside

'Programming Puzzles'by Matthew Whiteside offers an engaging collection of challenge and fun puzzles designed to sharpen your problem-solving skills and enhance your programming expertiseKey FeaturesA diverse range of puzzles to suit different skill

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Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate

Autor: Subramaniam Arulkumaran, Geok Ing Ng, Yilmaz Dikme, Matthew Whiteside, Abhinay Sandupatla

Publikováno v: Electronics, Vol 9, Iss 1858, p 1858 (2020)
Electronics
Volume 9
Issue 11

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 &de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ee40dd84ce415eb3163fe4631cc0c5a
https://www.mdpi.com/2079-9292/9/11/1858

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Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate

Autor: Subramaniam Arulkumaran, Matthew Whiteside, Geok Ing Ng

Publikováno v: Materials Science and Engineering: B. 270:115224

AlGaN/GaN metal–insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have been demonstrated with 22 nm thick vertically ordered (VO) h-BN by high-power impulse magnetron sputtering deposited at room temperature for the first time.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::53644307cf2b73659d62ae8a94ac554f
https://doi.org/10.1016/j.mseb.2021.115224

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Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure

Autor: Y. Dikme, Matthew Whiteside, K. Ranjan, Geok Ing Ng, Subramaniam Arulkumaran

Publikováno v: 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

AlGaN/GaN metal-insulator-semiconductor (MIS) diodes have been demonstrated using low temperature epitaxy (LTE) AlN grown at 200°C as a dielectric for the first time. The MIS-diodes exhibited 3 orders of magnitude lower gate leakage current compared

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b19a4a5ee8c8b5d44616f2b6b26f8397
https://doi.org/10.1109/edtm.2019.8731261

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Boron nitride coated three-dimensional graphene as an electrically insulating electromagnetic interference shield

Autor: Jong Jen Yu, Fei Ni Leong, Dunlin Tan, Matthew Whiteside, Edwin Hang Tong Teo, Geok Ing Ng, Soon Siang Chng, Siu Hon Tsang, Zhi Lin Ngoh, Roland Yingjie Tay

We demonstrate the potential of a novel hybrid nanostructure three-dimensional graphene (3D-C) coated with boron nitride (BN) as an electromagnetic interference (EMI) shield. BN, deposited by sputtering, encapsulates 3D-C to form a light-weight graph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c829a515661ba28d46c6f622ba1ef945
https://hdl.handle.net/10356/138809

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Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes

Autor: Subramaniam Arulkumaran, Matthew Whiteside, Geok Ing Ng, Y. Dikme, Abhinay Sandupatla

Publikováno v: Materials Science and Engineering: B. 262:114707

AlGaN/GaN metal-insulator-semiconductor (MIS) diodes were fabricated using low temperature epitaxy (LTE) grown AlN at 200 °C, a technique combining both physical vapor deposition and chemical vapor deposition. The interface trap characteristics of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::218cff700325220f76b8d29bb5667606
https://doi.org/10.1016/j.mseb.2020.114707

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On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate

Autor: Subramaniam Arulkumaran, Maziar Shakerzadeh, Matthew Whiteside, Soon Siang Chng, Teo Hang Tong Edwin, Geok Ing Ng

Publikováno v: Applied Physics Express. 13:065508

Vertically ordered hexagonal boron nitride (h-BN) films were successfully sputtered on AlGaN/GaN heterostructure (HS) using High Power Impulse Magnetron Sputtering at room temperature. The h-BNs vertical ordering along the (0002) plane was confirmed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c61e22695542f9eeeda10e5df47b4595
https://doi.org/10.35848/1882-0786/ab92ee

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