Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Matthew T. Currie"'
Autor:
J.G. Fiorenza, C. Leitz, Mayank T. Bulsara, H. Badawi, J. Carlin, Matthew T. Currie, N. Balasubramanian, T. Lochtefeld, G. Braithwaite, Shajan Mathew, L. K. Bera, Richard Hammond, T. A. Langdo, J. Yap, F. Singaporewala
Publikováno v:
Thin Solid Films. :85-89
Effect of strained-Si thickness on electrical properties of furnace grown gate oxide has been investigated. Interface state density ( D it ) versus energy characteristics shows that D it increases with decreasing strained-Si thickness, probably due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a114750a98e6abd7618f6d2522c4fc1b
https://doi.org/10.1016/j.tsf.2004.05.028
https://doi.org/10.1016/j.tsf.2004.05.028
Autor:
Isaac Lauer, Z. Y. Cheng, Mark Somerville, Anthony Lochtefeld, Mayank T. Bulsara, T. A. Langdo, Dimitri A. Antoniadis, Christopher J. Vineis, John A. Carlin, G. Braithwaite, C. W. Leitz, M. Erdtmann, J.G. Fiorenza, Matthew T. Currie
Publikováno v:
Solid-State Electronics. 48:1357-1367
SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c54b937051c4947674cf2e37624b456
https://doi.org/10.1016/j.sse.2004.02.013
https://doi.org/10.1016/j.sse.2004.02.013
Autor:
Shajan Mathew, F. Singaporewala, G. Braithwaite, N. Balasubramanian, Mayank T. Bulsara, Richard Hammond, J. Yap, Eugene A. Fitzgerald, L.K. Bera, Matthew T. Currie, Anthony Lochtefeld
Publikováno v:
Applied Surface Science. 224:278-282
Carrier generation lifetime ( τ g ) in strained-Si/SiGe has been investigated using capacitance transient method in MOS structure. Interface properties of thermally grown gate oxide on strained-Si/SiGe has been studied prior to transient capacitance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133859ddbca80e2d9562d0214ff4b4de
https://doi.org/10.1016/j.apsusc.2003.08.054
https://doi.org/10.1016/j.apsusc.2003.08.054
Autor:
C. W. Leitz, G. Braithwaite, F. Singaporewala, V. K. Yang, T. A. Langdo, J. Yap, H. Badawi, Mark Somerville, John A. Carlin, J.G. Fiorenza, Anthony Lochtefeld, Mayank T. Bulsara, Matthew T. Currie
Publikováno v:
Semiconductor Science and Technology. 19:L4-L8
This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f67b6d6972734e7bc567ce95695d03
https://doi.org/10.1088/0268-1242/19/1/l02
https://doi.org/10.1088/0268-1242/19/1/l02
Autor:
Vicky K. Yang, Michael E. Groenert, S. M. Ting, Eugene A. Fitzgerald, Mayank T. Bulsara, Matthew T. Currie, Christopher W. Leitz
Publikováno v:
Journal of Applied Physics. 93:5095-5102
In order to study the luminescent efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures with GaAs and Al0.25Ga0.75As cladding layers were grown on several substrates by an atmospheric metalorgan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a201b153866bf2c22a77e5251ac6801
https://doi.org/10.1063/1.1563031
https://doi.org/10.1063/1.1563031
Autor:
Michael E. Groenert, Matthew T. Currie, Arthur J. Pitera, Christopher W. Leitz, Eugene A. Fitzgerald, Vicky K. Yang
Publikováno v:
Journal of Applied Physics. 93:3859-3865
We have determined the critical cracking thickness, or the thickness beyond which crack formation is favored, in GaAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model predicts a critical cracking thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f64a76407128b8bd4118bbf3f43d7ee
https://doi.org/10.1063/1.1558963
https://doi.org/10.1063/1.1558963
Autor:
Dimitri A. Antoniadis, Minjoo L. Lee, Eugene A. Fitzgerald, Christopher W. Leitz, Z. Y. Cheng, Matthew T. Currie
Publikováno v:
Journal of Applied Physics. 92:3745-3751
Strained Si-based metal–oxide–semiconductor field-effect transistors (MOSFETs) are promising candidates for next-generation complementary MOS (CMOS) technology. While electron mobility enhancements in these heterostructures have been thoroughly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e3aa491cc8465cb9b3f8b9674950d5
https://doi.org/10.1063/1.1499213
https://doi.org/10.1063/1.1499213
Autor:
Gianni Taraschi, Matthew T. Currie, Christopher W. Leitz, Arthur J. Pitera, Z. Y. Cheng, Michael E. Groenert, Eugene A. Fitzgerald, Vicky K. Yang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:377-380
Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1b21f612e11f633509c07a1a89cbcc
https://doi.org/10.1023/a:1016006824115
https://doi.org/10.1023/a:1016006824115
Autor:
Dimitri A. Antoniadis, Wee Kiong Choi, Chuan Seng Tan, C. K. Maiti, L. K. Bera, Kin Leong Pey, Matthew T. Currie, Eugene A. Fitzgerald
Publikováno v:
Solid-State Electronics. 45:1945-1949
Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d54f8b0c42952f6b0a4505878577cb
https://doi.org/10.1016/s0038-1101(01)00238-6
https://doi.org/10.1016/s0038-1101(01)00238-6
Autor:
E. Robbins, Andrew Y. Kim, Christopher W. Leitz, J. Lai, Matthew T. Currie, Eugene A. Fitzgerald, Mayank T. Bulsara
Publikováno v:
Journal of Applied Physics. 90:2730-2736
The effects of growth temperature, substrate offcut, and dislocation pileup formation on threading dislocation density (TDD) in compositionally graded SiGe buffers are explored. To investigate dislocation glide kinetics in these structures, a series
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e659e0d3e089adf628152ed78a7ac02b
https://doi.org/10.1063/1.1389333
https://doi.org/10.1063/1.1389333