Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Matthew R. Peart"'
Autor:
Matthew R. Peart, Jonathan J. Wierer
Publikováno v:
IEEE Transactions on Electron Devices. 67:571-575
A method for edge termination utilizing polarization-induced charge for GaN vertical power devices is presented. The polarization edge termination is simulated on a GaN power diode and consists of a 5-nm-thick n-type AlGaN layer on top of a p-type Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a5c710dceb46c45813b24add5a5e2ed
https://doi.org/10.1109/ted.2019.2958485
https://doi.org/10.1109/ted.2019.2958485
Publikováno v:
ACS Applied Electronic Materials. 1:1367-1371
The oxidation of semiconductors is a fundamental building block of many modern electronic devices. The prime example is the oxidation of silicon into silicon dioxide, which is used as a gate dielec...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a32552af0940e01cd50d43b3f12a05
https://doi.org/10.1021/acsaelm.9b00266
https://doi.org/10.1021/acsaelm.9b00266
Publikováno v:
IEEE Transactions on Electron Devices. 65:4276-4281
The known benefits and challenges of AlInN as a next-generation power electronic semiconductor are presented. Al x In1− x N is lattice matched to GaN at ${x} = {0.82}$ and has the advantages of an available substrate, a wide bandgap (~4.4 eV), and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e29e0c38396aa268b3495e902a0d763
https://doi.org/10.1109/ted.2018.2866980
https://doi.org/10.1109/ted.2018.2866980
Publikováno v:
Journal of Applied Physics. 129:125105
The thermal oxidation rates of Al0.83In0.17N layers grown lattice-matched to GaN and the oxide's optical constants are studied. The ∼230 nm thick AlInN layers are placed into a horizontal furnace at elevated temperatures and exposed to either O2 (d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d22b44d91b6421d69f7373e9834175a8
https://doi.org/10.1063/5.0035711
https://doi.org/10.1063/5.0035711
Publikováno v:
Journal of Crystal Growth. 548:125847
Nearly lattice-matched and unintentionally doped AlInN films with low background doping grown via metalorganic vapor phase epitaxy on GaN/sapphire are investigated. The lattice-matched condition is verified with x-ray diffraction (XRD), and the films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d22238bb33a6ad67c4df0bd3ec594d4
https://doi.org/10.1016/j.jcrysgro.2020.125847
https://doi.org/10.1016/j.jcrysgro.2020.125847
Autor:
Nicholas C. Strandwitz, Matthew R. Peart, Nelson Tansu, Jonathan J. Wierer, Justin C. Goodrich, Onoriode N. Ogidi-Ekoko, Alexandra J. Howzen
Publikováno v:
Solid-State Electronics. 172:107881
Electrical properties of metal-oxide semiconductor (MOS) capacitors were measured with MgO/Al2O3 gate dielectrics deposited by atomic layer deposition (ALD) on GaN. For an Al2O3 (1 nm)/MgO (20 nm) dielectric layer, a leakage current density of 0.25 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda23452bae08c10040622f5341e9b37
https://doi.org/10.1016/j.sse.2020.107881
https://doi.org/10.1016/j.sse.2020.107881
Publikováno v:
Applied Physics Express. 13:091006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7e9e58467f266d5dd2a85c26b5a03b
https://doi.org/10.35848/1882-0786/abb180
https://doi.org/10.35848/1882-0786/abb180
Publikováno v:
2018 IEEE Photonics Conference (IPC).
InGaN quantum dots formed by quantum-size controlled photoelectrochemical etching are demonstrated. The QDs are capped with AlGaN/GaN passivation layers to reduce surface recombination These QDs are small-sized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a803997cc2d6fc590f4f584f2e0ac6
https://doi.org/10.1109/ipcon.2018.8527308
https://doi.org/10.1109/ipcon.2018.8527308
Autor:
Syed Ahmed Al Muyeed, Jonathan J. Wierer, Renbo Song, Rebecca M. Lentz, Xiongliang Wei, Wei Sun, Matthew R. Peart, Nelson Tansu, Damir Borovac
Publikováno v:
Journal of Applied Physics. 126:213106
The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are shown. By transforming measurements on radiative efficiency, absorption, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b03d3c2ae0646ce28a8bef00755e01a
https://doi.org/10.1063/1.5126965
https://doi.org/10.1063/1.5126965
Autor:
Syed Ahmed Al Muyeed, Xiongliang Wei, Matthew R. Peart, Jonathan J. Wierer, Nelson Tansu, Wei Sun
Publikováno v:
Applied Physics Letters. 113:121106
Room temperature luminescence of epitaxial InGaN quantum dots (QDs) formed by quantum sized-controlled photoelectrochemical (QSC-PEC) etching and passivation layer regrowth is demonstrated. QSC-PEC etching is performed on a 7.5 nm thick In0.20Ga0.80N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e707feac9652f7147aba6a7fa697921
https://doi.org/10.1063/1.5046857
https://doi.org/10.1063/1.5046857