Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Matthew P. Lumb"'
Autor:
Behrang H. Hamadani, Margaret A. Stevens, Brianna Conrad, Matthew P. Lumb, Kenneth J. Schmieder
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract We have used a calibrated, wide-field hyperspectral imaging instrument to obtain absolute spectrally and spatially resolved photoluminescence images in high growth-rate, rear-junction GaAs solar cells from 300 to 77 K. At the site of some lo
Externí odkaz:
https://doaj.org/article/463076479747468c81380aef2e3e6300
Autor:
Behrang H. Hamadani, Margaret A. Stevens, Brianna Conrad, Matthew P. Lumb, Eric Armour, Kenneth J. Schmieder
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbf41eca9f7c24ea6823d07c5cdf82c1
https://doi.org/10.1109/pvsc48317.2022.9938744
https://doi.org/10.1109/pvsc48317.2022.9938744
Autor:
Mitchell F. Bennett, Ziggy Pulwin, Kenneth J. Schmieder, Eric A. Armour, Jason D. Myers, Matthew P. Lumb, Margaret Stevens, Robert J. Walters, Jesse A. Frantz
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Fast epitaxial growth is an attractive method for reducing III-V photovoltaic device cost. Here, we grow a high-performance, rear-junction GaAs solar cell at 1 µm/min via metal organic chemical vapor deposition. We integrate an epitaxial distributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd652d186ce5d17b6c9f7982d2aadadf
https://doi.org/10.1109/pvsc43889.2021.9518409
https://doi.org/10.1109/pvsc43889.2021.9518409
Autor:
Robert J. Walters, Mitchell F. Bennett, Shawn Mack, Kenneth J. Schmieder, Chelsea R. Haughn, Matthew P. Lumb, S. I. Maximenko, Michael K. Yakes
Publikováno v:
Journal of Crystal Growth. 507:402-405
Micro-transfer printing has demonstrated value for device- and array-level heterogeneous integration in a variety of applications. Here, it is used instead to assemble unique substrates with the potential to enable III–V growth templates that are b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca3c1931943e911d0b852a75f12e112
https://doi.org/10.1016/j.jcrysgro.2018.11.033
https://doi.org/10.1016/j.jcrysgro.2018.11.033
Publikováno v:
Bands and Photons in III-V Semiconductor Quantum Structures
The chapter discusses a full implementation of k·p theory for the eight bands near the energy gap in a III–V semiconductor. This model can precisely calculate the band structure for both conduction and valence bands near the energy gap. Even thoug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8da97065888e65941d900c02f646f82
https://doi.org/10.1093/oso/9780198767275.003.0003
https://doi.org/10.1093/oso/9780198767275.003.0003
Publikováno v:
Bands and Photons in III-V Semiconductor Quantum Structures
Previous chapters discussed the crystal structure and bandstructure of III–V semiconductors. This chapter shifts to the book’s second major topic: electronic interactions with light. It introduces the main ideas about how light waves propagate in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4855a17220f789117256135a822ac0
https://doi.org/10.1093/oso/9780198767275.003.0004
https://doi.org/10.1093/oso/9780198767275.003.0004
Publikováno v:
Bands and Photons in III-V Semiconductor Quantum Structures
III–V semiconductors form crystalline structures with three-dimensional periodic arrangements of the atoms. In this chapter, we will explore the nature of the crystal lattice starting from lower dimensions and progressing to real semiconductor crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d10d53871fa4f571968a20e56c233c8e
https://doi.org/10.1093/oso/9780198767275.003.0001
https://doi.org/10.1093/oso/9780198767275.003.0001
Publikováno v:
Bands and Photons in III-V Semiconductor Quantum Structures
The so-called k·p theory provides an effective framework for modeling the band structures of III–V semiconductors. This approach starts with a handful of bands that are coupled in accordance with the crystal symmetry discussed in Chapter 1. This c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d18f6dbab56ad07c6ea2d3ef33dfdf
https://doi.org/10.1093/oso/9780198767275.003.0002
https://doi.org/10.1093/oso/9780198767275.003.0002
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e382aec886596963da2e06d52f976982
https://doi.org/10.1093/oso/9780198767275.001.0001
https://doi.org/10.1093/oso/9780198767275.001.0001
Autor:
Matthew P. Lumb, Justin Lorentzen, David Scheiman, Kenneth J. Schmieder, Phillip P. Jenkins, Woojun Yoon
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
There is a need for characterization of multi-junction solar cell based test coupons under collimated sunlight for both terrestrial and space applications. These applications include solar cell angle measurements and concentrator systems. The U.S. Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecc30c5a774f0303a8653cf86af033c6
https://doi.org/10.1109/pvsc45281.2020.9300873
https://doi.org/10.1109/pvsc45281.2020.9300873