Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Matthew Murdy Griffin"'
Autor:
Mark Horowitz, Satoru Takase, Matthew Murdy Griffin, Victor E. Lee, D. Stark, John B. Dillon, Thomas H. Lee, Shigeo Ohshima, Natsuki Kushiyama, Tohru Furuyama, A. Chan, R.M. Barth, H. Noji, Kiyofumi Sakurai, James A. Gasbarro
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:490-498
A 512-kb*9 DRAM with a 500-Mbyte/s data transfer rate was developed. This high data rate was achieved by designing a DRAM core with a very high internal column bandwidth, and coupling this core with a block-oriented, small-swing, synchronous interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ca8a8d722c6af70620c260262ed620
https://doi.org/10.1109/4.210033
https://doi.org/10.1109/4.210033
Autor:
T. Furuyuma, Victor E. Lee, Kiyofumi Sakurai, Satoru Takase, Natsuki Kushiyama, Mark Horowitz, James A. Gasbarro, Wingyu Leung, D. Stark, Shigeo Ohshima, Matthew Murdy Griffin, Winston South San Francisco Lee, B. Barth, John B. Dillon
Publikováno v:
1992 Symposium on VLSI Circuits Digest of Technical Papers.
A novel 512-kb*9 DRAM with a 500-Mbyte/s data transfer rate has been designed. This high data-rate has been achieved by coupling a very high internal column bandwidth DRAM core with a very high internal column bandwidth, and coupling this core with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ed33ebd64a83c45ea51c9167d72161
https://doi.org/10.1109/vlsic.1992.229280
https://doi.org/10.1109/vlsic.1992.229280