Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Matthew J. Gadlage"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2289-2294
Radiation hardness of FinFET and stacked nanowire (NW) static random-access memory (SRAM), with ${L} _{\text {G}} =20$ nm, which corresponds to high-density 5 nm technology node, is studied and compared using 3-D technology computer-aided design (TCA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa406b46cce7539467be6dd4d055711d
https://doi.org/10.1109/ted.2021.3067855
https://doi.org/10.1109/ted.2021.3067855
Autor:
David I. Bruce, Dobrin P. Bossev, Peter M. Conway, Matthew J. Gadlage, Aaron M. Williams, James D. Ingalls
Publikováno v:
IEEE Transactions on Nuclear Science. 66:466-473
Neutron-induced single event upsets (SEUs) have become a significant reliability concern for advanced electronics. Ever-shrinking device sizes and the introduction of new elements in state-of-the-art integrated circuits (ICs) have increased device ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ceb86251770cf995a065c0bf5a4dbe
https://doi.org/10.1109/tns.2018.2885847
https://doi.org/10.1109/tns.2018.2885847
Autor:
Matthew J. Kay, Dobrin P. Bossev, David I. Bruce, James D. Ingalls, Matthew Mckinney, Matthew J. Gadlage
Publikováno v:
IEEE Transactions on Nuclear Science. 66:148-154
The amount of data corruption in a wide assortment of flash memories observed during Co-60 total dose tests is shown to have a strong dependence on the direction in which the Co-60 irradiation is performed. The effect is due to dose enhancement from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a396682b8cbf3f74664c04363ef3a3f
https://doi.org/10.1109/tns.2018.2879685
https://doi.org/10.1109/tns.2018.2879685
Autor:
Kevin Goodman, Sam McHenry, Jeff Titus, Robert Cooper, Hemant Ghadi, Steve Ringel, Kazuki Nomoto, Wenshen Li, Dobrin P. Bossev, Debdeep Jena, Huili Grace Xing, Matthew J. Gadlage, Matthew R. Halstead
Publikováno v:
physica status solidi (a). 219:2100700
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::701966f7d5c83ee76144f66dff3c63e8
https://doi.org/10.1002/pssa.202100700
https://doi.org/10.1002/pssa.202100700
Autor:
Adam R. Duncan, Matthew J. Kay, Austin H. Roach, Dobrin P. Bossev, Aaron M. Williams, Matthew J. Gadlage
Publikováno v:
IEEE Transactions on Nuclear Science. 65:211-216
Multiple-cell upsets (MCUs) in static random access memory-based field-programmable gate arrays from three different technology nodes are recorded from single-particle interactions with 20–52 MeV electrons. Indirect ionization events associated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e091723945d61f0bd0806ef14698e687
https://doi.org/10.1109/tns.2017.2756441
https://doi.org/10.1109/tns.2017.2756441
Autor:
Aaron M. Williams, Austin H. Roach, Adam R. Duncan, Matthew J. Gadlage, Matthew J. Kay, Dobrin P. Bossev
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:157-162
In the semiconductor reliability community, soft error research has primarily focused on neutrons and alpha particles. However, there are certain situations and environments in which high-energy electrons may also lead to soft errors. In this paper,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fbd117fb9a7c49d99adfc72c38b35b
https://doi.org/10.1109/tdmr.2016.2634626
https://doi.org/10.1109/tdmr.2016.2634626
Publikováno v:
IEEE Transactions on Nuclear Science. 64:637-642
Single-event transients (SETs) induced by alpha particles and heavy ions are measured and analyzed with subthreshold voltage SET characterization circuits. Using a Schmitt trigger inverter target chain fabricated in a 65-nm bulk CMOS process, SET pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcad4350fff390bc8ec04de812f56cd
https://doi.org/10.1109/tns.2016.2629448
https://doi.org/10.1109/tns.2016.2629448
Publikováno v:
International Symposium for Testing and Failure Analysis.
An application-specific integrated circuit (ASIC) for a high reliability application is found to have a missing sidewall spacer in a single transistor. Manufacturer burn-in and standard component electrical tests do not capture this defect. The defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c09c4b6dd09641a0512208253f5e50a
https://doi.org/10.31399/asm.cp.istfa2019p0323
https://doi.org/10.31399/asm.cp.istfa2019p0323
Autor:
J. David Ingalls, Jonathan Wang, Aaron M. Williams, David I. Bruce, Rajiv Y. Ranjan, Matthew J. Gadlage
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
The total dose and heavy ion radiation responses of 55 nm non-volatile spin transfer torque memory devices from Avalanche Technology are presented, and show these devices to be inherently largely radiation tolerant.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cd19c682a787d639ccf44fdde5b61e
https://doi.org/10.1109/redw.2019.8906645
https://doi.org/10.1109/redw.2019.8906645
Publikováno v:
IEEE Transactions on Nuclear Science. 63:1276-1283
Radiation and stress-induced degradation are characterized in split-gate NOR flash cells through a set of unique experiments. Radiation and program/erase stress on the bit cells is shown to create both positive and negative traps in the oxide around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::186e53ed4b239dc5d32bdad82fae8946
https://doi.org/10.1109/tns.2016.2540803
https://doi.org/10.1109/tns.2016.2540803