Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Matthew J. Filmer"'
Autor:
Matthew J. Filmer, Matthew Huebner, Thomas A. Zirkle, Xavier Jehl, Marc Sanquer, Jonathan D. Chisum, Alexei O. Orlov, Gregory L. Snider
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Sensitive dispersive readouts of single-electron devices (“gate reflectometry”) rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an im
Externí odkaz:
https://doaj.org/article/09338ece8b174bedbf6a93dd4bf41339
Autor:
Thomas A. Zirkle, Matthew J. Filmer, Jonathan Chisum, Alexei O. Orlov, Eva Dupont-Ferrier, Joffrey Rivard, Matthew Huebner, Marc Sanquer, Xavier Jehl, Gregory L. Snider
Publikováno v:
Applied Sciences, Vol 10, Iss 24, p 8797 (2020)
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used f
Externí odkaz:
https://doaj.org/article/d322d20fe10646308c56b665bcd00485
Autor:
Golnaz Karbasian, Michael S. McConnell, Hubert George, Louisa C. Schneider, Matthew J. Filmer, Alexei O. Orlov, Alexei N. Nazarov, Gregory L. Snider
Publikováno v:
Applied Sciences, Vol 7, Iss 3, p 246 (2017)
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used
Externí odkaz:
https://doaj.org/article/90eadc6b8ee7411a95f5d8976828c55b
Autor:
Matthew J. Filmer, Matthew Huebner, Thomas A. Zirkle, Xavier Jehl, Marc Sanquer, Jonathan D. Chisum, Alexei O. Orlov, Gregory L. Snider
Publikováno v:
Scientific Reports
Scientific Reports, 2022, 12 (1), pp.3098. ⟨10.1038/s41598-022-06727-1⟩
Scientific Reports, 2022, 12 (1), pp.3098. ⟨10.1038/s41598-022-06727-1⟩
Sensitive dispersive readouts of single-electron devices (“gate reflectometry”) rely on one-port radio-frequency (RF) reflectometry to read out the state of the sensor. A standard practice in reflectometry measurements is to design an impedance t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b381e775b83c6b8761bf7b5ba7bf2b8
https://pubmed.ncbi.nlm.nih.gov/35197499
https://pubmed.ncbi.nlm.nih.gov/35197499
Autor:
Marc Sanquer, Gregory L. Snider, Jonathan Chisum, Matthew Huebner, Eva Dupont-Ferrier, Alexei O. Orlov, Thomas A. Zirkle, Xavier Jehl, Matthew J. Filmer, Joffrey Rivard
Publikováno v:
Applied Sciences, Vol 10, Iss 8797, p 8797 (2020)
Applied Sciences
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Applied Sciences
Applied Sciences, 2020, 10 (24), pp.8797. ⟨10.3390/app10248797⟩
Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::738f2975a05f78448ba2547a7ff6af46
https://doi.org/10.3390/app10248797
https://doi.org/10.3390/app10248797
Publikováno v:
Applied Physics Letters. 116:213103
Single-electron tunneling transistors (SETs) and boxes (SEBs) belong to the family of charge-sensitive electronic devices based on the phenomenon of Coulomb blockade. An SEB is a two-terminal device composed of “leaky,” C j, and “non-leaky,”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d2ddb05e6e852124c84d420ed2cb6d6
https://doi.org/10.1063/5.0005425
https://doi.org/10.1063/5.0005425
Publikováno v:
Solid-State Electronics. 111:234-237
The impact of scaling on off-state current of p-i-n diodes is studied. A sub-micron p-i-n diode exhibits a dominating surface component of leakage current. Variation in i-layer thickness has an impact on bulk leakage. Bulk leakage scales with cross-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af81abf0771678f81c2c43ef0c3da22f
https://doi.org/10.1016/j.sse.2015.03.016
https://doi.org/10.1016/j.sse.2015.03.016
Autor:
Chris Hobbs, Sean L. Rommel, Wei-Yip Loh, Kausik Majumdar, Paul Thomas, R. Contreras-Guerrero, Abhinav Gaur, Enri Marini, Man Hoi Wong, Kunal Bhatnagar, Ravi Droopad, Matthew J. Filmer, Brian Romanczyk, D. Pawlik
Publikováno v:
IEEE Transactions on Electron Devices. 62:2450-2456
In0.53Ga0.47As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In0.53Ga0.47As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206a17117100c233f3e03fa6a5c8a6bb
https://doi.org/10.1109/ted.2015.2445731
https://doi.org/10.1109/ted.2015.2445731
Autor:
Paul Thomas, Ken Matthews, Ravi Droopad, Chris Hobbs, Abhinav Gaur, David Pawlik, Matthew J. Filmer, Wei-Yip Loh, Brian Romanczyk, Sean L. Rommel, P. Y. Hung, Paul D. Kirsch, Kausik Majumdar
Publikováno v:
IEEE Transactions on Electron Devices. 61:2049-2055
Growing good quality III–V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74e879baa96be859f7a9953dad072585
https://doi.org/10.1109/ted.2014.2318597
https://doi.org/10.1109/ted.2014.2318597