List of contributors

Autor: Akhil Ajay, Nazmul Arefin, Francesco Bertazzi, John D. Bullough, Martin D.B. Charlton, Chi-Feng Chen, Tzung-Te Chen, Yuk Fai Cheung, Ching-Hsueh Chiu, Hoi Wai Choi, Pei-Ting Chou, Chun-Fan Dai, Carlo De Santi, Houqiang Fu, Han-Kuei Fu, Michele Goano, Hideki Hirayama, Ray-Hua Horng, Run Hu, C.-Y. Huang, JianJang Huang, Tadakazu Ikenaga, S.M. Islam, D. Jena, Matthew H. Kane, Yulia Kotsar, Richard Kotschenreuther, Hao-Chung Kuo, Chun-Feng Lai, Yu-Pin Lan, Wonseok Lee, Zhen-Yu Li, Chien-Chung Lin, Chia-Feng Lin, Da-Wei Lin, Xiaobing Luo, Zetao Ma, Koh Matsumoto, Gaudenzio Meneghesso, Matteo Meneghini, Akira Mishima, Eva Monroy, Guanxi Piao, V. Protasenko, Jae-Hyun Ryou, James Speck, Linas Svilainis, Toshiya Tabuchi, Alberto Tibaldi, Hiroki Tokunaga, Yuji Tomita, Akinori Ubukata, Marco Vallone, A. Verma, J. Verma, Giovanni Verzellesi, Chien-Ping Wang, Yuh-Renn Wu, Zhanchao Wu, Dong-Sing Wuu, Zhiguo Xia, Yoshiki Yano, Wen-Yung Yeh, Enrico Zanoni, Yuji Zhao, Qiandong Zhuang

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51c34adff7c0af64083c0edb749de70f
https://doi.org/10.1016/b978-0-08-101942-9.01002-9

Transition metal and rare earth doping in GaN

Autor: Matthew H. Kane, Shalini Gupta, Ian T. Ferguson

Wide-bandgap dilute magnetic semiconductors have been of interest in the past decade due to theoretical predictions of room-temperature ferromagnetism in these materials. This chapter provides a synopsis of the progress made to date in GaN based with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::742b239d2240491ede587c4ad27e66ca
https://doi.org/10.1016/b978-0-08-100041-0.00010-x

Magnetic and optical properties of single crystals of transition metal doped ZnO

Autor: Qing Song, Jeff Nause, Z. J. Zhang, David J. Keeble, William E. Fenwick, Ian T. Ferguson, C. J. Summers, Bill Nemeth, Graham Smith, Matthew H. Kane, R. Varatharajan, Martin Strassburg, Hassane El-Mkami

Publikováno v: physica status solidi (b). 244:1462-1467

Considerable effort has been devoted to the study of transition metal doped zinc oxide following various theoretical predictions of room temperature ferromagnetism in these materials. Near equilibrium growth techniques may be suitable for the product

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b915db5e30e60402748a7a119e7f85fa
https://doi.org/10.1002/pssb.200675105

GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process

Autor: Nazmul Arefin, Khalid Hossain, Brittany N. Pritchett, Matthew H. Kane, V. R. Whiteside, Patrick J. McCann, Preston R. Larson, Matthew B. Johnson

Publikováno v: MRS Proceedings. 1736

Growth of GaN on Si(111) and Ge coated Si(111) using pulsed electron beam deposition (PED) process is reported. GaN was deposited on Si(111) and Ge/Si(111) at 600°C in an N2 environment without any surface pre-treatment such as pre-nitridation. X-ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7bef03f592e5bbd40dc1632a4dd90f3
https://doi.org/10.1557/opl.2015.244

Optical studies of MOCVD‐grown GaN‐based ferromagnetic semiconductor epilayers and devices

Autor: Unil Perera, Ali Asghar, Matthew H. Kane, Axel Hoffmann, Ian T. Ferguson, Nikolaus Dietz, Wolfgang Gehlhoff, Z. G. Hu, Martin Strassburg, Samuel Graham, Jayantha Senawiratne, D. Azamat, Christopher J. Summers, William E. Fenwick, Enno Malguth

Publikováno v: physica status solidi c. 3:2237-2240

Ga1–xMnxN epilayers and p-i-n device structures have been grown by metalorganic chemical vapor deposition. Optical studies were found to investigate the role of Mn concentration and the role of different co-dopants to elucidate the origin of the ro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e53564f9750b9d61cc75b74ce973213d
https://doi.org/10.1002/pssc.200565434