Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Matthew H Evans"'
Autor:
Matthew H. Evans, Patrice Maniglier
Publikováno v:
Common Knowledge. 22:415-430
Structuralism is often associated with a program, in keeping with the Durkheimian tradition, of reducing social norms to a kind of causality. On this reading, Émile Durkheim's collective representations became, in Claude Lévi-Strauss' work, cogniti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5cac453032641a67889607bd6d2788f
https://doi.org/10.1215/0961754x-3622260
https://doi.org/10.1215/0961754x-3622260
Autor:
Jonah Kanner, J. McIver, Chris Pankow, Tyson Littenberg, Carl-Johan Haster, Katerina Chatziioannou, Eve Chase, Matthew H Evans, Aaron Zimmerman, Vivien Raymond, Neil J. Cornish, Salvatore Vitale
In the coming years gravitational-wave detectors will undergo a series of improvements, with an increase in their detection rate by about an order of magnitude. Routine detections of gravitational-wave signals promote novel astrophysical and fundamen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b90d80e8169ad0a2e8bfb0d6e6fdbf9
https://resolver.caltech.edu/CaltechAUTHORS:20181010-094039772
https://resolver.caltech.edu/CaltechAUTHORS:20181010-094039772
Autor:
Sokrates T. Pantelides, Ronald D. Schrimpf, Matthew H. Evans, Leonidas Tsetseris, Matthieu Caussanel
Publikováno v:
Journal of Computational Electronics. 6:425-430
Molecular electronic devices show promise for future applications, but assessment of their utility is limited by the lack of physically based engineering models. In this paper, quantum-mechanical results obtained with density-functional theory (DFT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1640a10ebd5eafae8abca2306904c4c
https://doi.org/10.1007/s10825-007-0151-9
https://doi.org/10.1007/s10825-007-0151-9
Autor:
Matthieu Caussanel, Sokrates T. Pantelides, Ronald D. Schrimpf, Leonidas Tsetseris, Matthew H Evans, George Hadjisavvas
Publikováno v:
ECS Transactions. 6:353-362
Carrier mobilities in metal-oxide-semiconductor field-effect transistors (MOSFETs) are conventionally modeled in a semi-classical approximation, i.e., particles are treated as classical parti-cles with a suitable effective mass or with a kinetic ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::494a83a04fe2af1595e5222cb28a42c6
https://doi.org/10.1149/1.2728882
https://doi.org/10.1149/1.2728882
Publikováno v:
Journal of Computational Electronics. 6:85-88
For several decades, electron and hole mobilities have been adequately modeled using a semiclassical approximation of the Boltzamnn equation, using either an effective-mass expression or the bulk energy bands of Si to describe the carriers’ kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daf3a8e736faef1dab8f068e3717b321
https://doi.org/10.1007/s10825-006-0070-1
https://doi.org/10.1007/s10825-006-0070-1
Autor:
Sanwu Wang, Shiqiang Wang, Leonidas Tsetseris, S. J. Pennycook, Matthew H Evans, K. McDonald, G.Y. Chung, Tamara Isaacs-Smith, I. G. Batyrev, K. van Benthem, A. Franceschetti, M. Di Ventra, Sokrates T. Pantelides, Robert A. Weller, Gerd Duscher, Ryszard Buczko, Sarit Dhar, Leonard C. Feldman, Sergey N. Rashkeev, Chin-Che Tin, Daniel M. Fleetwood, X.J. Zhou, Ronald D. Schrimpf, Lisa M. Porter, John R. Williams
Publikováno v:
Materials Science Forum. :935-948
Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c441f7520107c1476408cacbb0eb47
https://doi.org/10.4028/www.scientific.net/msf.527-529.935
https://doi.org/10.4028/www.scientific.net/msf.527-529.935
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
This paper presents a first-principles approach to modeling wavefunction penetration and transport in UTSOI MOSFETs that includes accurate quantum mechanics and atomic-scale structures with no empirical parameters. Applications to interface roughness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a34fda5659a691b2719b3126f0189f9
https://doi.org/10.1109/iedm.2005.1609420
https://doi.org/10.1109/iedm.2005.1609420
Autor:
Stephen J. Pennycook, Leonidas Tsetseris, J. D. Joannopoulos, Matthew H Evans, X.-G. Zhang, Sergey N. Rashkeev, Daniel M. Fleetwood, Zhong-Yi Lu, X.J. Zhou, K. van Benthem, Evgeni Gusev, Sokrates T. Pantelides, R. D. Schrimpf
Publikováno v:
Defects in High-k Gate Dielectric Stacks ISBN: 1402043651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a50b76b8e2573045576bde40ddbaed2
https://doi.org/10.1007/1-4020-4367-8_15
https://doi.org/10.1007/1-4020-4367-8_15
Publikováno v:
Physical Review B. 72
We report the results of first-principles calculations showing that boron can form a wide variety of metastable planar and tubular forms with unusual electronic and mechanical properties. The preferred planar structure is a buckled triangular lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237e067b21b7d9a85cc4ba3d2f1216ef
https://doi.org/10.1103/physrevb.72.045434
https://doi.org/10.1103/physrevb.72.045434
Publikováno v:
MRS Proceedings. 829
Ultrathin silicon-on-insulator (UTSOI) technology1 has emerged as a key candidate for sub-100nm gate length CMOS devices. Recent experiments have characterized MOSFETs with silicon channels as thin as 1nm (four atomic layers of silicon),2,3 and found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55cbf26a1358804ff53f59de7cf603d7
https://doi.org/10.1557/proc-829-b7.10
https://doi.org/10.1557/proc-829-b7.10