Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Matthew Guidry"'
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Autor:
Brian Markman, Simone Tommaso Suran Brunelli, Aranya Goswami, Matthew Guidry, Mark J. W. Rodwell
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 930-934 (2020)
In0.53Ga0.47As/InAs composite channel MOS-HEMT exhibiting peak fτ = 511 GHz and peak fmax = 285 GHz is demonstrated. Additionally, another device exhibiting peak fτ = 286 GHz and peak fmax = 460 GHz is reported. The devices have a 1 nm / 3 nm AlxOy
Externí odkaz:
https://doaj.org/article/fd3b191274754695beecbd4aa67f475b
Autor:
Rohit R. Karnaty, Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Umesh K. Mishra, James F. Buckwalter
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1932-1944
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabec0d12f8f6dadf31cf5ee374904d4
https://doi.org/10.1109/tmtt.2023.3245668
https://doi.org/10.1109/tmtt.2023.3245668
Autor:
Emre Akso, Henry Collins, Christopher Clymore, Weiyi Li, Matthew Guidry, Brian Romanczyk, Christian Wurm, Wenjian Liu, Nirupam Hatui, Robert Hamwey, Pawana Shrestha, Stacia Keller, Umesh K. Mishra
Publikováno v:
IEEE Microwave and Wireless Technology Letters. :1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea8d301e8dd9de6614e23c6d2e6122c
https://doi.org/10.1109/lmwt.2023.3239532
https://doi.org/10.1109/lmwt.2023.3239532
Autor:
Wenjian Liu, Xun Zheng, Christian Wurm, Nirupam Hatui, Pawana Shrestha, Brian Romanczyk, Matthew Guidry, Umesh K. Mishra, Weiyi Li, Stacia Keller
Publikováno v:
IEEE Microwave and Wireless Components Letters. 31:748-751
This letter reports on the $W$ -band power performance of N-polar GaN deep recess MIS–high electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium (Ru) gate metallization process. The deep recess structure is utili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190beed106428c0a18e863b27d589330
https://doi.org/10.1109/lmwc.2021.3067228
https://doi.org/10.1109/lmwc.2021.3067228
Autor:
Matthew Guidry, Pawana Shrestha, Wenjian Liu, Brian Romanczyk, Nirupam Hatui, Christian Wurm, Rohit Karnaty, Haoran Li, Elaheh Ahmadi, Stacia Keller, James F. Buckwalter, Umesh K. Mishra
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7af3fead5ae5ac531851bbe4c0ec7b5
https://doi.org/10.1109/ims37962.2022.9865510
https://doi.org/10.1109/ims37962.2022.9865510
Autor:
Stacia Keller, Weiyi Li, Christian Wurm, Umesh K. Mishra, Matthew Guidry, Nirupam Hatui, Athith Krishna, Brian Romanczyk
Publikováno v:
IEEE Electron Device Letters. 41:1633-1636
This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level of performance, sapphire substrates are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96a44c2939173642d5807e1336e3678
https://doi.org/10.1109/led.2020.3022401
https://doi.org/10.1109/led.2020.3022401
Autor:
Brian Romanczyk, Stacia Keller, Wenjian Liu, Nirupam Hatui, Umesh K. Mishra, Islam Sayed, William J. Mitchell, Matthew Guidry
Publikováno v:
IEEE Electron Device Letters. 41:1468-1471
In this letter, we report the Schottky barrier diode investigation of ruthenium (Ru) deposited by atomic layer deposition on N-polar GaN. The Schottky diodes showed near-ideal thermionic current behavior under forward bias and reverse bias at various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9e58c19164245abce830581e854c8f
https://doi.org/10.1109/led.2020.3014524
https://doi.org/10.1109/led.2020.3014524
Autor:
Umesh K. Mishra, Athith Krishna, Matthew Guidry, James F. Buckwalter, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Pawana Shrestha, Shubhra S. Pasayat, Christian Wurm, Stacia Keller
Publikováno v:
IEEE Electron Device Letters. 41:681-684
Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers, non-linearities, in particular third-order intermodulation products lead to in-band signal distorti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e3512704def95f69117a3bbfd19c39
https://doi.org/10.1109/led.2020.2980841
https://doi.org/10.1109/led.2020.2980841
Autor:
Elaheh Ahmadi, Stacia Keller, Brian Romanczyk, Matthew Guidry, Xun Zheng, Haoran Li, Umesh K. Mishra
Publikováno v:
IEEE Transactions on Electron Devices. 67:1542-1546
This article reports on the extraction of the electron velocity as a function of gate bias from N-polar GaN deep recess high-electron-mobility transistors (HEMTs) designed for mm-wave power amplification. Bias-dependent small-signal S-parameter measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c910ad3ac1ee56420b00a1b1c68bce6a
https://doi.org/10.1109/ted.2020.2973081
https://doi.org/10.1109/ted.2020.2973081