Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Matthew B. E. Griffiths"'
Autor:
Jan-Lucas Wree, Jean-Pierre Glauber, David Zanders, Detlef Rogalla, Malte Becher, Matthew B. E. Griffiths, Andreas Ostendorf, Seán T. Barry, Andreas Ney, Anjana Devi
Publikováno v:
ACS Applied Electronic Materials. 4:3772-3779
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2e4d57e312e4c7b2167844dab9067bf
https://doi.org/10.1021/acsaelm.2c00685
https://doi.org/10.1021/acsaelm.2c00685
Autor:
Alex J. Veinot, Matthew B. E. Griffiths, Ishwar Singh, Joseph A. Zurakowski, Paul A. Lummis, Seán T. Barry, Cathleen M. Crudden
Publikováno v:
Materials Advances. 3:6446-6450
We show that the N-heterocyclic carbene precursor employed has a significant influence on the purity of the resulting films prepared by vapour-phase deposition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8250cc379247e20eb3dd6f4887810c39
https://doi.org/10.1039/d2ma00413e
https://doi.org/10.1039/d2ma00413e
Autor:
Zachary S. Dubrawski, Jason D. Masuda, Goran Bačić, Matthew B. E. Griffiths, Seán T. Barry, Achini Japahuge, Tao Zeng
Publikováno v:
European Journal of Inorganic Chemistry. 2019:4927-4938
Atomic layer deposition (ALD) of gold is being studied by multiple research groups, but to date no process using non-energetic co-reactants has been demonstrated. In order to access milder co-reactants, precursors with higher thermal stability are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964162f6346a8100b63f439b87eef0a5
https://doi.org/10.1002/ejic.201901087
https://doi.org/10.1002/ejic.201901087
A survey of known gold-containing chemical vapour deposition (CVD) and atomic layer deposition (ALD) precursors, with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ef1739a9d4022d3d23fbdeaced9952
https://doi.org/10.26434/chemrxiv.13077386.v1
https://doi.org/10.26434/chemrxiv.13077386.v1
Autor:
J. Ruud van Ommen, Matthew B. E. Griffiths, Seán T. Barry, Ankit Shekhar, Vikram R Ravikumar, Dominik Benz, Fatemeh Sadat Minaye Hashemi, Fabio Grillo
Publikováno v:
Nanoscale, 12 (16)
Nanoscale, 12(16)
Nanoscale, 12(16)
Gold nanoparticles have been extensively studied for their applications in catalysis. For Au nanoparticles to be catalytically active, controlling the particle size is crucial. Here we present a low temperature (105 °C) thermal atomic layer depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2584720a2063e971cf92c7d9ca29f99c
https://hdl.handle.net/20.500.11850/415863
https://hdl.handle.net/20.500.11850/415863
Autor:
Seán T. Barry, Christophe Detavernier, Matthias Minjauw, Matthew B. E. Griffiths, Jolien Dendooven, Michiel Van Daele
Publikováno v:
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
The reaction mechanism of the recently reported Me3AuPMe3-H-2 plasma gold ALD process was investigated using in situ characterization techniques in a pump-type ALD system. In situ RAIRS and in vacuo XPS measurements confirm that the CH3 and PMe3 liga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7204920764a48d01746443caf01ae8d9
https://biblio.ugent.be/publication/8690480/file/8690486
https://biblio.ugent.be/publication/8690480/file/8690486
Autor:
Antonia G. Denkova, Hubert Th. Wolterbeek, Matthew B. E. Griffiths, Josette L. T. M. Moret, Baukje E. Terpstra, J. Ruud van Ommen, Seán T. Barry, Jeannine E. B. M. Frijns
Publikováno v:
Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films, 38(2)
Atomic layer deposition (ALD) is a versatile gas phase coating technique that allows coating of complex structured materials, as well as high-surface area materials such as nanoparticles. In this work, ALD is used to deposit a lutetium oxide layer on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf04193a084657e88866e1d7b34a2164
https://doi.org/10.1116/1.5134446
https://doi.org/10.1116/1.5134446
Autor:
Jolien Dendooven, Michiel Van Daele, Matthew B. E. Griffiths, Christophe Detavernier, Stéphane Clemmen, Ji-Yu Feng, Eduardo Solano, Seán T. Barry, Ali Raza, Ranjith Karuparambil Ramachandran, Roel Baets, Matthias Minjauw
Publikováno v:
ACS Applied Materials & Interfaces, 11 (40
ACS APPLIED MATERIALS & INTERFACES
ACS APPLIED MATERIALS & INTERFACES
A plasma-enhanced atomic layer deposition (PE-ALD) process to deposit metallic gold is reported, using the previously reported Me3Au(PMe3) precursor with H-2 plasma as the reactant. The process has a deposition window from 50 to 120 degrees C with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08e7a8d5dfb8bce45803f80038472ab6
http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/295392
http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/295392
Autor:
David Zanders, Matthew B. E. Griffiths, Seán T. Barry, Jason D. Masuda, Anjana Devi, Michael A. Land
Publikováno v:
Journal of Vacuum Science & Technology A. 39:032409
Eight new atomic layer deposition (ALD) precursors were synthesized using a ligand that is new to the field of ALD: (tBuNH)SiMe2NMe2. Complexes containing Mg, V, Mn, Fe, Co, Ni, and Zn were found to be tetrahedral, and Li complexes form more complex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ebffefefbf8cddcc9c213a802842721
https://doi.org/10.1116/6.0000795
https://doi.org/10.1116/6.0000795
Publikováno v:
Journal of Vacuum Science & Technology A. 39:022401
This is a survey of known gold-containing chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be3b66d21ef4fa43f131e7bfecf088ed
https://doi.org/10.1116/6.0000707
https://doi.org/10.1116/6.0000707