Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Matthew, San Jose"'
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Autor:
Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Fu-Xiang Liang, Jorge Gomez, Matthew San Jose, Yandong Luo, Huacheng Ye, Sourav Dutta, Priyankka G. Ravikumar, Prasanna Venkatesan Ravindran, Asif Islam Khan, Shimeng Yu, Suman Datta
Publikováno v:
IEEE Transactions on Electron Devices. 69:2094-2100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d650d5e3da8c8e904c94f53c8a5e1e5
https://doi.org/10.1109/ted.2022.3142239
https://doi.org/10.1109/ted.2022.3142239
Autor:
Kai Ni, Matthew San Jose, Jeffrey Smith, Siddharth Joshi, Zephan M. Enciso, Suman Datta, Sourav Dutta, Benjamin Grisafe, Chloe Frentzel
Publikováno v:
IEEE Transactions on Electron Devices. 68:516-522
Outsourcing of integrated circuit (IC) manufacturing and increasing sophistication of IC reverse engineering techniques have unleashed security threats such as intellectual property (IP) theft and insertion of hardware Trojans. In this article, we pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbf36c99503094fa6d3c089da044df9
https://doi.org/10.1109/ted.2020.3045380
https://doi.org/10.1109/ted.2020.3045380
Autor:
Wriddhi Chakraborty, Rakshith Saligram, Aniket Gupta, Matthew San Jose, Khandker Akif Aabrar, Sourav Dutta, Abhishek Khanna, Arijit Raychowdhury, Suman Datta
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ebf1fd9a890d4f23d8c535f082d6cf
https://doi.org/10.1109/iedm19574.2021.9720578
https://doi.org/10.1109/iedm19574.2021.9720578
Autor:
Cheng-Hsiang Hsu, Yoonsoo Rho, Steve Volkman, Brian Tyrrell, Suman Datta, Corey Stull, Zhan Zhang, Woo-Bin Song, Suraj Cheema, Jim Ciston, Padraic Shafer, Apurva Mehta, Won-Tae Koo, Chenming Hu, Gianni Pinelli, Jong-Ho Bae, Li-Chen Wang, Seung-Geol Nam, Matthew A. Cook, Dong Jin Jung, Jorge Gomez, Dominick Pipitone, Patrick Fay, Sayeef Salahuddin, John W. Freeland, Chung-Hsun Lin, Jinseong Heo, Kab-Jin Nam, Wenshen Li, Mohamed Mohamed, Nirmaan Shanker, Costas P. Grigoropoulos, Matthew San Jose, Ramamoorthy Ramesh, Vladimir Stoica, Ghazal Soheli, Christopher J. Tassone, Dong Ik Suh, David Thompson, Yu-Hung Liao, Ravi Rastogi, Shang-Lin Hsu, Daewoong Kwon
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to the adoption of high-κ diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f8aaa2e1c2c48a54ff1b9ae31d4a4b
https://doi.org/10.21203/rs.3.rs-413053/v1
https://doi.org/10.21203/rs.3.rs-413053/v1
Autor:
Suraj S, Cheema, Nirmaan, Shanker, Li-Chen, Wang, Cheng-Hsiang, Hsu, Shang-Lin, Hsu, Yu-Hung, Liao, Matthew, San Jose, Jorge, Gomez, Wriddhi, Chakraborty, Wenshen, Li, Jong-Ho, Bae, Steve K, Volkman, Daewoong, Kwon, Yoonsoo, Rho, Gianni, Pinelli, Ravi, Rastogi, Dominick, Pipitone, Corey, Stull, Matthew, Cook, Brian, Tyrrell, Vladimir A, Stoica, Zhan, Zhang, John W, Freeland, Christopher J, Tassone, Apurva, Mehta, Ghazal, Saheli, David, Thompson, Dong Ik, Suh, Won-Tae, Koo, Kab-Jin, Nam, Dong Jin, Jung, Woo-Bin, Song, Chung-Hsun, Lin, Seunggeol, Nam, Jinseong, Heo, Narendra, Parihar, Costas P, Grigoropoulos, Padraic, Shafer, Patrick, Fay, Ramamoorthy, Ramesh, Souvik, Mahapatra, Jim, Ciston, Suman, Datta, Mohamed, Mohamed, Chenming, Hu, Sayeef, Salahuddin
Publikováno v:
Nature. 604(7904)
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::77332fdd50103bf7aa4204de78c57539
https://pubmed.ncbi.nlm.nih.gov/35388197
https://pubmed.ncbi.nlm.nih.gov/35388197