Stable field emission from vertically oriented SiC nanoarrays

Autor: Chi Li, Ke Chen, Guanjiang Liu, Mattew Thomas Cole, Jianfeng Xiao, Jiuzhou Zhao, Dai Qing, Shenghan Zhou, Zhenjun Li, Xinchuan Liu

Publikováno v: Xiao, J, Zhao, J, Liu, G, Cole, M, Zhou, S, Chen, K, Liu, X, Li, Z, Li, C & Dai, Q 2021, ' Stable field emission from vertically oriented SiC nanoarrays ', Nanomaterials, vol. 11, no. 11, 3025 . https://doi.org/10.3390/nano11113025
Nanomaterials
Volume 11
Issue 11
Nanomaterials, Vol 11, Iss 3025, p 3025 (2021)

Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficu

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https://purehost.bath.ac.uk/ws/files/226998044/Final_Accepted.pdf