Zobrazeno 1 - 10
of 577
pro vyhledávání: '"Matteo, Meneghini"'
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Autor:
Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Normal Susilo, Daniel Hauer Vidal, Anton Muhin, Luca Sulmoni, Tim Wernicke, Micheal Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 1, Pp 1-6 (2024)
In this paper we investigate the reliability of AlGaN-based UV-C LEDs with an emission wavelength of 265 nm. By submitting the devices to constant current stress, two main electrical degradation processes are identified: a turn-on voltage shift and a
Externí odkaz:
https://doaj.org/article/a1046786be954d2eaa3b8eb8aa7d2ef6
Autor:
Nicolò Lago, Francesco Moretti, Noah Tormena, Alessandro Caria, Matteo Buffolo, Carlo De Santi, Nicola Trivellin, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Fabio Matteocci, Jessica Barichello, Luigi Vesce, Aldo Di Carlo, Federico Quartiani
Publikováno v:
Photonics, Vol 11, Iss 9, p 880 (2024)
The mass production of photovoltaic (PV) devices requires fast and reliable characterization methods and equipment. PV manufacturers produce a complete module roughly every 20 s, and the electrical performance assessment is typically completed in les
Externí odkaz:
https://doaj.org/article/52934dce674b4cdf845e6aa24dacf71d
Autor:
Alexander Herzog, Simon Benkner, Babak Zandi, Matteo Buffolo, Willem D. Van Driel, Matteo Meneghini, Tran Quoc Khanh
Publikováno v:
IEEE Access, Vol 11, Pp 19928-19940 (2023)
We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of ${\mathrm {365~ \text {n} \text {m} }}$ . The stress tests were carried out for a pe
Externí odkaz:
https://doaj.org/article/ab768cbf2079407582a02b8a143e721b
Autor:
Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identification of the related traps is challenging, especially in presence of non-ideal defects. In this paper, we propose a novel methodology (trap
Externí odkaz:
https://doaj.org/article/19975594cbff42dab96aa7ac9e686921
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Autor:
Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo Wasisto
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Abstract This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e.,
Externí odkaz:
https://doaj.org/article/cb21572995a7431785e864b86686240e
Autor:
Claudia Casu, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1266 (2022)
The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compressive strain induced by the lattice mismatch between the InGaN and GaN layers, and to the stronger incorporation of defects favored by the presence of
Externí odkaz:
https://doaj.org/article/0ca0518e586246e7b789d0924dd45257
Autor:
Gao Zhan, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Hervé Blanck, Jan Grünenpütt, Daniel Sommer, Ding Yuan Chen, Kai-Hsin Wen, Jr-Tai Chen, Enrico Zanoni
Publikováno v:
IEEE Transactions on Electron Devices. 70:3005-3010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4162cb889aa56efb52b179f28dd1d1a
https://doi.org/10.1109/ted.2023.3270134
https://doi.org/10.1109/ted.2023.3270134
Autor:
Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Industrial Electronics. 4:309-316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b90692c0f6635a091f76098bb8c94566
https://doi.org/10.1109/jestie.2022.3212331
https://doi.org/10.1109/jestie.2022.3212331
Autor:
Alessandro Caria, Carlo De Santi, Matteo Buffolo, Marco Nicoletto, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. :1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c66240b6f6d3a9a8a835c3c51ac55ed
https://doi.org/10.1109/ted.2023.3272297
https://doi.org/10.1109/ted.2023.3272297