Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Mattan Erez"'
Autor:
Joseph Crop, Evgeni Krimer, Nariman Moezzi-Madani, Robert Pawlowski, Thomas Ruggeri, Patrick Chiang, Mattan Erez
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 1, Iss 3, Pp 334-356 (2011)
While Moore’s law scaling continues to double transistor density every technology generation, new design challenges are introduced. One of these challenges is variation, resulting in deviations in the behavior of transistors, most importantly in sw
Externí odkaz:
https://doaj.org/article/ea28a73c0d5a4698bd8efb6507566cb9
Autor:
Majid Jalili, Mattan Erez
Publikováno v:
IEEE Computer Architecture Letters. 21:105-108
Autor:
Hochan Lee, William Ruys, Ian Henriksen, Arthur Peters, Yineng Yan, Sean Stephens, Bozhi You, Henrique Fingler, Martin Burtscher, Milos Gligoric, Karl Schulz, Keshav Pingali, Christopher J. Rossbach, Mattan Erez, George Biros
Publikováno v:
SC22: International Conference for High Performance Computing, Networking, Storage and Analysis.
Publikováno v:
2021 36th IEEE/ACM International Conference on Automated Software Engineering (ASE).
Publikováno v:
SOSP
High-capacity non-volatile memory (NVM) is a new main memory tier. Tiered DRAM+NVM servers increase total memory capacity by up to 8x, but can diminish memory bandwidth by up to 7x and inflate latency by up to 63% if not managed well. We study existi
Autor:
Gokcen Kestor, Saman Amarasinghe, Leon Song, Michael Carbin, Sriram Krishnamoorthy, Ganesh Gopalakrishnan, Scott Mahlke, Joseph Manzano, Gagan Agrawal, Mattan Erez, Martin Rinard, P. Sadayappan, Burcu O. Mutlu, Omer Subasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357447ec7b06c58c2b9851639a56b447
https://doi.org/10.2172/1642550
https://doi.org/10.2172/1642550
Autor:
Suyash Mahar, João Dinis Ferreira, Onur Mutlu, Lois Orosa, Ran Ginosar, Mattan Erez, Leonid Yavits
Publikováno v:
ICCD
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes across th
Autor:
Jeff Pool, David Nellans, Michael J. Sullivan, Mike O'Connor, Stephen W. Keckler, Esha Choukse, Mattan Erez
Publikováno v:
ISCA
GPUs accelerate high-throughput applications, which require orders-of-magnitude higher memory bandwidth than traditional CPU-only systems. However, the capacity of such high-bandwidth memory tends to be relatively small. Buddy Compression is an archi
Publikováno v:
ISCA
Near-data accelerators (NDAs) that are integrated with main memory have the potential for significant power and performance benefits. Fully realizing these benefits requires the large available memory capacity to be shared between the host and the ND