Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Matt Yeh"'
Autor:
B.F. Wu, C.O. Chui, Matt Yeh, Shun‐yu Wang, K.C. Kwong, R. Chen, Jen-Hsiang Lu, Sy Wu, C.H. Chang, Kenlin Huang, Vincent S. Chang, Kuei-Shun Chen, W.H. Wu, C.H. Chen, J.Y. Yeh, B.C. Hsu
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
For the first time, multiple-Vt (multi-Vt) device options with Vt range> 250 mV are achieved in standard cells at dimensions beyond 7nm technology node. To overcome the common scaling challenges of potential device options such as FinFET and gate all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25aa62195df57503d8bf9f34d5c5c8f
https://doi.org/10.1109/vlsitechnology18217.2020.9265050
https://doi.org/10.1109/vlsitechnology18217.2020.9265050
Autor:
Stanley Huang, Matt Yeh, Jeffrey M. Lauerhaas, Jeffery W. Butterbaugh, David Yang, Anthony S. Ratkovich, S.M. Jang, Chien-Hao Chen, Bill Yu
Publikováno v:
Solid State Phenomena. 195:46-49
Selective etching of silicon nitride films has been an important process step in integrated circuit manufacturing for many years [1-. In the past, this process has been mainly used to remove the silicon nitride mask which protects the transistor acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea99c1f13a0a9409b8747f38665e314
https://doi.org/10.4028/www.scientific.net/ssp.195.46
https://doi.org/10.4028/www.scientific.net/ssp.195.46
Autor:
Fan Yi Hsu, Eric Houyang, Matt Yeh, Ducky Liao, Shun Wu Lin, Scott Ku, T.J. Yang, Chi-Ming Yang
Publikováno v:
Solid State Phenomena. 187:89-92
Advanced device is more sensitive to material loss and dopant fluctuation, that might strongly influence device performance. Conventional dry ash process for implanted photoresist strip can not meet the requirement of material loss minimization of ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5dc1ff81798a0fcab00b492cae903e2
https://doi.org/10.4028/www.scientific.net/ssp.187.89
https://doi.org/10.4028/www.scientific.net/ssp.187.89
Publikováno v:
Solid State Phenomena. 187:71-74
The static electricity of wet clean was characterized by contactless surface voltage measurement on silicon oxide dielectric in this study. The paper shows surface static charge at wafer center caused by a single wafer spin cleaning tool. Deionized w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e468b0b3b575aeb51e7bd1cd981486c
https://doi.org/10.4028/www.scientific.net/ssp.187.71
https://doi.org/10.4028/www.scientific.net/ssp.187.71
Autor:
Matt Yeh, Chi-Ming Yang, David Huang, S.M. Jang, K. B. Huang, Scott Ku, J. P. Chuang, Chia-Tung Chen
Publikováno v:
ECS Transactions. 41:31-36
Advanced technology nodes introduce new module processes, materials and integrated flow scheme to drive device performance, such as epitaxial SiGe, high-k metal gate (HKMG) or III-V substrate materials [1]. Conventional wet cleaning technologies can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fa72eda20a690fce0b0152c2536a14
https://doi.org/10.1149/1.3630823
https://doi.org/10.1149/1.3630823
Autor:
Matt Yeh, H. Shirakawa, Scott Ku, M. Tanaka, Chien-Hao Chen, Masanobu Sato, Ying Hsueh Chang Chien, K. Sotoku, Chi-Ming Yang, T. Tanaka, K. Izumoto, S.M. Jang
Publikováno v:
Solid State Phenomena. 195:195-197
In semiconductor device manufacturing, single wafer processors are widely used in not only BEOL process but also in FEOL process for 2X devices to improve the cleaning efficiency and get the higher productivity. Because the scaled down devices requir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50ab4afa1d355c01095ea4dba5ccb91
https://doi.org/10.4028/www.scientific.net/ssp.195.195
https://doi.org/10.4028/www.scientific.net/ssp.195.195
Autor:
Ying-Hsueh Chang Chien, Matt Yeh, Chie-Ming Yang, Scott Ku, Chi-Chao Wan, Chi-Chang Hu, Ethan Chen, Jack Yan, Emeline Khuan, Koh Joyce
Publikováno v:
ECS Meeting Abstracts. :3358-3358
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479e52739238e507ff8a4c6183070c14
https://doi.org/10.1149/ma2012-02/47/3358
https://doi.org/10.1149/ma2012-02/47/3358
Publikováno v:
ECS Meeting Abstracts. :2050-2050
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993566c7ca855006ff1903ff94cf787e
https://doi.org/10.1149/ma2011-02/30/2050
https://doi.org/10.1149/ma2011-02/30/2050