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pro vyhledávání: '"Matt Werden Graham"'
Publikováno v:
ECS Meeting Abstracts. :1325-1325
In amorphous oxide semiconductors such as indium gallium zinc oxide (a-IGZO), subgap states often play an important role in determing thin-film transistor (TFT) operation metrics such as turn-on voltage, mobility, hysteresis, and bias-stress stabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5325431b6940feacf0643a6e1d3aa686
https://doi.org/10.1149/ma2022-01311325mtgabs
https://doi.org/10.1149/ma2022-01311325mtgabs
