Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Matt W. Graham"'
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Interlayer electronic states in twisted bilayer graphene are characterized by flat-band regions hosting many-body electronic effects. Here, the authors observe two-photon photoluminescence excitation and excited-state absorption spectra on graphene c
Externí odkaz:
https://doaj.org/article/5d3ab994f6774a18a65ee2baf91841e3
Autor:
Kyle T. Vogt, Christopher E. Malmberg, Jacob C. Buchanan, George W. Mattson, G. Mirek Brandt, Dylan B. Fast, Paul H.-Y. Cheong, John F. Wager, Matt W. Graham
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033358 (2020)
The subgap density of states of amorphous indium gallium zinc oxide (a-IGZO) is obtained using the ultrabroadband photoconduction response of thin-film transistors (TFTs). Density-functional theory simulations classify the origin of the measured subg
Externí odkaz:
https://doaj.org/article/d5e5868446bb459d932299954c102e52
Publikováno v:
Advanced Functional Materials. :2300742
Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin-film transistors (TFTs). Spanning the wide band
Publikováno v:
ECS Transactions. 97:339-357
Amorphous oxide thin-film transistors (TFTs) have provided a new route to transparent, low power consumption, large-area display technology. The properties of these thin films are crucially dependent on material composition and process variations whi
Publikováno v:
The Journal of Physical Chemistry C. 124:15195-15204
Despite inherently poor interlayer conductivity, photodetectors made from few-layer stacked 2D transition metal dichalcogenides (TMDs) such as WSe2 and MoS2 often yield a desirable fast (≤∼90 ps) a...
Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b5da1b4e018b5c361be4a846b9fe6bd
http://arxiv.org/abs/2111.08588
http://arxiv.org/abs/2111.08588
Autor:
John F. Wager, Dylan B. Fast, Kyle T. Vogt, G. Mirek Brandt, Christopher E. Malmberg, George W. Mattson, Matt W. Graham, Paul Ha-Yeon Cheong, Jacob C. Buchanan
Publikováno v:
Physical Review Research. 2
The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the mea
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVII.
Autor:
John F. Wager, Matt W. Graham, Paul Ha-Yeon Cheong, George W. Mattson, Christopher E. Malmberg, Kyle T. Vogt
Publikováno v:
Oxide-based Materials and Devices XI.
Amorphous semiconducting transparent oxides like InGaZnO4 (a-IGZO) have a broad distribution of metal and oxygen vacancy defects that determine thin film transistor (TFT) characteristics and impact device reliability metrics such as hysteresis. Here,
Publikováno v:
The 22nd International Conference on Ultrafast Phenomena 2020.
Single crystal excited state dynamics in functionalized anthradithiophene (ADT) derivatives were compared across four distinct packing morphologies. Using polarization-dependent transient absorption microscopy, morphology-dependent singlet fission wa