Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Matt J. Lamantia"'
Autor:
Erik Nelson, Matt J. Lamantia, Brooke Murray, Larry E. Frisa, Colleen Weins, Joseph Gordon, Michael Green
Publikováno v:
SPIE Proceedings.
With the use of 193nm lithography, haze growth has increased and become a critical issue for photomask suppliers and wafer fabs. Currently, the industry uses various test methods to measure known contributions to crystal growth, such as ion chromatog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956a4bbd3002e95e768f4cb0afa4bc83
https://doi.org/10.1117/12.632204
https://doi.org/10.1117/12.632204
Autor:
John Manfredo, Charles H. Howard, Matt J. Lamantia, James G. Tsou, Jason Hickethier, Robert Kiefer, Vishal Garg, Curt Jackson, Sarah Cohen, Peter D. Buck
Publikováno v:
SPIE Proceedings.
In the recent past Deep Ultra Violet (DUV) Laser generated photomasks have gained widespread acceptance for critical and semi-critical applications in semi-conductor lithography. The advent of stable, highly capable, single-layer Chemically Amplified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdc73bd94cdd4ba5678467768473034
https://doi.org/10.1117/12.557720
https://doi.org/10.1117/12.557720
Autor:
Matt J. Lamantia, Arthur D. Klaum, Dianna Coburn, Dawn M. Woolery, Colleen Weins, David Chmielewski, Robert Vinje
Publikováno v:
SPIE Proceedings.
The semiconductor industry continues to aggressively shrink linewidths and manufacture more closely spaced patterns to improve power and speed performances, as well as increase die per wafer counts. Current development is near 100 nm and high volume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b30b2eec1d48ed87650e50b21c30d8
https://doi.org/10.1117/12.468087
https://doi.org/10.1117/12.468087
Autor:
Robert K. Henderson, Matt J. Lamantia, Jerry Xiaoming Chen, Cyrus E. Tabery, Amy A. Winder, Cecilia E. Philbin, Greg P. Hughes, Eugene A. DeLaRosa, John Riddick, Lloyd C. Litt, Azeddine Zerrade, Khoi A. Phan, Christopher A. Spence, Anthony Vacca, William A. Stanton, Scott Pomeroy, John Maltabes
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
Repair and printability of 193nm alternating aperture phase shift masks have been studied in detail in an effort to understand the overall production capability of these masks for wafer production at the 100nm node and below.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8891cd27678215e4aaf7d1b7e2f0613c
https://doi.org/10.1117/12.458362
https://doi.org/10.1117/12.458362
Autor:
Christopher A. Spence, Matt J. Lamantia, Jerry Xiaoming Chen, Khoi A. Phan, Hugo A. Villa, John Riddick
Publikováno v:
SPIE Proceedings.
As reticle enhancement techniques (OPC, PSM) become more commonly used in multi-masking levels for 130nm node and below, the need for a better and more precise reticle specification will be even greater. OPC and sub-nominal assist feature like scatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fecfb9a7a4f88705c9f1b993c9e9658a
https://doi.org/10.1117/12.410693
https://doi.org/10.1117/12.410693