Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Matt Hankinson"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:388-401
We derive and investigate three different run-to-run (R2R) feedback controllers for the purpose of trying to minimize the detrimental effects of lithography process disturbances on critical resist profiles. Our controllers manipulate the dose and foc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7fd7920fdad22f5d256e5d9950f9b8
https://doi.org/10.1109/tsm.2004.831530
https://doi.org/10.1109/tsm.2004.831530
Autor:
Pedro Herrera, Bill Banke, H. Nii, Matthew Sendelbach, Matt Hankinson, Charles N. Archie, Jason Mayer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
Currently, CD-SEMs are the tool of choice for in-line gate length measurements for most semiconductor manufacturers. This is in large part due to their flexibility, throughput, and ability to correlate well to physical measurements (e.g., XSEM). Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d5c809207b15353eaef883e9696eb4
https://doi.org/10.1117/12.538009
https://doi.org/10.1117/12.538009
Publikováno v:
SPIE Proceedings.
Parametric yield loss is an increasing fraction of total yield loss. Much of this originates in lithography in the form of pattern-limited yield. In particular, the ITRS has identified CD control at the 65nm technology node as a potential roadblock w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3998094b398de9b0e447b30e5051f3b7
https://doi.org/10.1117/12.537349
https://doi.org/10.1117/12.537349
Publikováno v:
SPIE Proceedings.
This paper evaluates sampling plans for overlay metrology in the context of Advanced Process Control (APC). The relationship between APC opportunity (the maximum benefit achievable via APC) and correctable accuracy is investigated. The tradeoff betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f816349fa524cd0e74b45d9c8fd75d
https://doi.org/10.1117/12.473528
https://doi.org/10.1117/12.473528
Autor:
Xuemei Chen, Ady Levy, Michael D. Slessor, Georges Falessi, Amir Lev, Matt Hankinson, Kevin M. Monahan, Craig Garvin
Publikováno v:
SPIE Proceedings.
Fundamentally, advanced process control enables accelerated design-rule reduction, but simple microeconomic models that directly link the effects of advanced process control to profitability are rare or non-existent. In this work, we derive these lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b786a32439adf55fa45114ab1e5a4422
https://doi.org/10.1117/12.473503
https://doi.org/10.1117/12.473503
Publikováno v:
AIP Conference Proceedings.
The aggressively shrinking process window drives the semiconductor manufacturer to examine, refine, and control all aspects of the manufacturing process. Process budgets leave little room for error contribution. Budget management, and ultimately achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7644b42052f3e981fb49ec638d303320
https://doi.org/10.1063/1.1354373
https://doi.org/10.1063/1.1354373
Publikováno v:
SPIE Proceedings.
Deep-UV lithography using 248 and 193-nm light will be the microlithography technology of choice for the manufacturing of advanced memory and logic semiconductor devices for the next decade. Since 193nm lithography development has been slow, the exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2705c4389fbc91d23a89243c40236903
https://doi.org/10.1117/12.389047
https://doi.org/10.1117/12.389047
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:2304
In this article, we have derived a run-to-run (R2R) control design technique that integrates feedforward and feedback control on the etch process. The purpose is to minimize the effect of an oxygen flow disturbance during the resist trim on the polys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd3377346ffacf12ae9608a8ef53489
https://doi.org/10.1116/1.1615983
https://doi.org/10.1116/1.1615983
Conference
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